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Structural Properties of Nitrides Grown by Omvpe on Sapphire Substrate

Published online by Cambridge University Press:  10 February 2011

H. Amano ,
T. Takeuchi ,
S. Yamaguchi ,
S. Nitta ,
M. Kariya ,
M. Iwaya ,
C. Wetzel  and
I. Akasaki
H. Amano
Affiliation:
Department of Electrical and Electronic Engineering, Meijo University, 1–501 Shiogamaguchi, Tempaku-ku, Nagoya 468 Japan
T. Takeuchi
Affiliation:
Department of Electrical and Electronic Engineering, Meijo University, 1–501 Shiogamaguchi, Tempaku-ku, Nagoya 468 Japan
S. Yamaguchi
Affiliation:
Department of Electrical and Electronic Engineering, Meijo University, 1–501 Shiogamaguchi, Tempaku-ku, Nagoya 468 Japan
S. Nitta
Affiliation:
Department of Electrical and Electronic Engineering, Meijo University, 1–501 Shiogamaguchi, Tempaku-ku, Nagoya 468 Japan
M. Kariya
Affiliation:
Department of Electrical and Electronic Engineering, Meijo University, 1–501 Shiogamaguchi, Tempaku-ku, Nagoya 468 Japan
M. Iwaya
Affiliation:
Department of Electrical and Electronic Engineering, Meijo University, 1–501 Shiogamaguchi, Tempaku-ku, Nagoya 468 Japan
C. Wetzel
Affiliation:
Department of Electrical and Electronic Engineering, Meijo University, 1–501 Shiogamaguchi, Tempaku-ku, Nagoya 468 Japan
I. Akasaki
Affiliation:
Department of Electrical and Electronic Engineering, Meijo University, 1–501 Shiogamaguchi, Tempaku-ku, Nagoya 468 Japan
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Abstract

Crystalline quality of nitrides on sapphire by OMVPE has been investigated. First, in-situ observations of the crystallization process of the low temperature deposited AIN buffer layer or GaN buffer layer on sapphire substrate have been performed. Small hexagonal mesas were formed from the sapphire to the surface and finally they formed a stacked structure. Secondly, a low temperature deposited buffer layer located between the high temperature grown GaN was found to reduce the etch pit density of GaN films. Thirdly, structural properties of Ga1−xInxN (0 ≤x≤0.21, and x= l) on GaN and GaInN/GaN MQWs on GaN have been characterized by Xray diffraction. Coherently grown GaInN showed almost the same twisting as the underlying GaN layer, while free standing InN showed large twisting. Thickness of the well layers in MQWs has been controlled within one monolayer preciseness, and the fluctuation of alloy composition has been controlled to within 2%

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 482 , 1997 , 479
Copyright
Copyright © Materials Research Society 1998

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