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Structural Properties of 3C-SiC Layers Grown on Si Substrates by Electron Cyclotron Resonance CVD Technique

Published online by Cambridge University Press:  21 March 2011

F. Giorgis ,
A. Chiodoni ,
G. Cicero ,
S. Ferrero ,
P. Mandracci ,
C. F. Pirri ,
G. Barucca ,
L. Calcagno ,
G. Foti  and
P. Musumeci
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F. Giorgis*
Affiliation:
INFM and Physics Dept., Polytechnic of Torino, C.so Duca degli Abruzzi 24, I-10129Torino (Italy)
A. Chiodoni
Affiliation:
INFM and Physics Dept., Polytechnic of Torino, C.so Duca degli Abruzzi 24, I-10129Torino (Italy)
G. Cicero
Affiliation:
INFM and Physics Dept., Polytechnic of Torino, C.so Duca degli Abruzzi 24, I-10129Torino (Italy)
S. Ferrero
Affiliation:
INFM and Physics Dept., Polytechnic of Torino, C.so Duca degli Abruzzi 24, I-10129Torino (Italy)
P. Mandracci
Affiliation:
INFM and Physics Dept., Polytechnic of Torino, C.so Duca degli Abruzzi 24, I-10129Torino (Italy)
C. F. Pirri
Affiliation:
INFM and Physics Dept., Polytechnic of Torino, C.so Duca degli Abruzzi 24, I-10129Torino (Italy)
G. Barucca
Affiliation:
INFM and Materials Science Dept., University of Ancona, Via Brecce Bianche, I-60131 Ancona (Italy)
L. Calcagno
Affiliation:
INFM and Physics Dept., University of Catania, C.so Italia 57, I-95129 Catania (Italy)
G. Foti
Affiliation:
INFM and Physics Dept., University of Catania, C.so Italia 57, I-95129 Catania (Italy)
P. Musumeci
Affiliation:
INFM and Physics Dept., University of Catania, C.so Italia 57, I-95129 Catania (Italy)
R. Reitano
Affiliation:
INFM and Physics Dept., University of Catania, C.so Italia 57, I-95129 Catania (Italy)
*
*Author to whom correspondence should be addressed. E-mail: giorgis@polito.it
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Abstract

In this work we mainly report on the analyses of polycrystalline silicon carbide films grown by Electron Cyclotron Resonance Chemical Vapor Deposition (ECR-CVD) on Si (100) and Si (111) substrates. Structural properties of the films have been analyzed by X-ray diffractometry, transmission electron microscopy and micro-Raman spectroscopy. Samples deposited with optimized deposition conditions, show a polycrystalline columnar structure with lateral crystal dimensions ranging from 300 up to 1400 Å and an orientation close to that of the Si substrates.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 640: Symposium H – Silicon Carbide-Materials, Processing, and Devices , 2000 , H5.9
Copyright
Copyright © Materials Research Society 2001

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References

REFERENCES

1. ‘Properties of Silicon Carbide’ Ed. by Harris, Gary L., IEE emis Datareviews N.13 (1995) and references therein.Google Scholar
2. Kitabatake, M., Thin Solid Films 369, 257 (2000).Google Scholar
3. Teker, K., Jacob, C., Chung, J., Hong, M. H., Thin Solid Films 371, 53 (2000).Google Scholar
4. Futagi, T., Katsuno, M., Ohtani, N., Ohta, Y., Mimura, H., Appl. Phys. Lett. 58,2948 (1991).Google Scholar
5. Liu, C.C., Lee, C., Cheng, K.L., Cheng, H.C., Yew, T.R., Appl. Phys. Lett. 66,168 (1995).Google Scholar
6. Mandracci, P., Ferrero, S., Cicero, G., Giorgis, F., Pirri, C.F., Barucca, G., Reitano, R., Musumeci, P., Calcagno, L., Foti, G., Thin Solid Films (in press).Google Scholar
7. Giorgis, F., Chiodoni, A., Cicero, G., Ferrero, S., Mandracci, P., Barucca, G., Reitano, R., Musumeci, P., Diamond and Rel. Mat. (in press).Google Scholar
8. As verified by recent accurate measurements, the substrate temperatures of 450, 650 and 850 °C declared in ref. 6,7 correspond to real temperatures of 430, 700 and 930 °C respectively.Google Scholar
9. Freitas, J.A., in Ref. 1, p. 21.Google Scholar