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Structural Processes in Gold-Based Metallization During the Formation of Ohmic Contacts to GaSb

  • A. Piotrowska (a1), E. Kańifiska (a1), M. Guziewicz (a1), E. Mizera (a2), E. Dynowska (a2), X. W. Lin (a3), S. Rouvimov (a3), Z. Liliental Weber (a3) and S. Kwiatkowski (a4)...

Abstract

Annealing behavior of Au, AuZn, and AuSb metallization on GaSb have been investigated by the combined use of RBS, XRD, TEM, and I-V characterization. The results give evidence that the thermally activated contact reaction strongly depends on the particular elements incorporated in the Au layer. Pure Au reacts with GaSb at 100°C. The addition of Zn to Au metallization increases the thermal stability of the metallization/semiconductor system to 200°C. Antimony, forming with gold the AuSb2 phase in metallization, provides the most stable ohmic contact system.

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5. Piotrowska, A., Kańifiska, E., Piotrowski, T., Kasjaniuk, S., Guziewicz, M., Gierlotka, S., Lin, X.W., Liliental-Weber, Z., Washburn, J., and Kwiatkowski, S., Acta Physica Polonica A 87, 419 (1995).

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Structural Processes in Gold-Based Metallization During the Formation of Ohmic Contacts to GaSb

  • A. Piotrowska (a1), E. Kańifiska (a1), M. Guziewicz (a1), E. Mizera (a2), E. Dynowska (a2), X. W. Lin (a3), S. Rouvimov (a3), Z. Liliental Weber (a3) and S. Kwiatkowski (a4)...

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