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Structural Processes in Gold-Based Metallization During the Formation of Ohmic Contacts to GaSb

Published online by Cambridge University Press:  15 February 2011

A. Piotrowska ,
E. Kańifiska ,
M. Guziewicz ,
E. Mizera ,
E. Dynowska ,
X. W. Lin ,
S. Rouvimov ,
Z. Liliental Weber  and
S. Kwiatkowski
A. Piotrowska
Affiliation:
Institute of Electron Technology, Warszawa, Poland, ania@ite.waw.pl
E. Kańifiska
Affiliation:
Institute of Electron Technology, Warszawa, Poland, ania@ite.waw.pl
M. Guziewicz
Affiliation:
Institute of Electron Technology, Warszawa, Poland, ania@ite.waw.pl
E. Mizera
Affiliation:
Institute of Physics, PAS, Warszawa, Poland
E. Dynowska
Affiliation:
Institute of Physics, PAS, Warszawa, Poland
X. W. Lin
Affiliation:
Lawrence Berkeley Laboratory, University of California, Berkeley, CA
S. Rouvimov
Affiliation:
Lawrence Berkeley Laboratory, University of California, Berkeley, CA
Z. Liliental Weber
Affiliation:
Lawrence Berkeley Laboratory, University of California, Berkeley, CA
S. Kwiatkowski
Affiliation:
Institute of Nuclear Studies Warszawa, Poland
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Abstract

Annealing behavior of Au, AuZn, and AuSb metallization on GaSb have been investigated by the combined use of RBS, XRD, TEM, and I-V characterization. The results give evidence that the thermally activated contact reaction strongly depends on the particular elements incorporated in the Au layer. Pure Au reacts with GaSb at 100°C. The addition of Zn to Au metallization increases the thermal stability of the metallization/semiconductor system to 200°C. Antimony, forming with gold the AuSb2 phase in metallization, provides the most stable ohmic contact system.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 403: Symposium I – Polycrystalline Thin Films: Structure, Texture, Properties and Applications II , 1995 , 669
Copyright
Copyright © Materials Research Society 1996

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References

1. Heinz, C.H., Int. J. Electron. 54, 247 (1983).Google Scholar
2. Oliveira, J.B.B., Olivieri, C.A., Galzerani, J.C., Pasa, A.A., and de Prince, F.C., J. Appl. Phys. 66, 5484 (1989).Google Scholar
3. Villemain, E., Gaillard, S., Rolland, M., and Joullie, A., Materials Science and Engineering B20, 162(1993).Google Scholar
4. Milnes, A.G. and Ye, M., and Stam, M., Solid-State Electron. 37, 37 (1994).Google Scholar
5. Piotrowska, A., Kańifiska, E., Piotrowski, T., Kasjaniuk, S., Guziewicz, M., Gierlotka, S., Lin, X.W., Liliental-Weber, Z., Washburn, J., and Kwiatkowski, S., Acta Physica Polonica A 87, 419 (1995).Google Scholar