Hostname: page-component-848d4c4894-tn8tq Total loading time: 0 Render date: 2024-06-21T23:02:12.989Z Has data issue: false hasContentIssue false

Structural, Optical and Magnetic Properties of Co and Fe Doped ZnO Thin Films Grown by Radio Frequency Magnetron Sputtering

Published online by Cambridge University Press:  01 February 2011

Luis Manuel Angelats
Affiliation:
langelats@yahoo.com, National University of Trujillo, Physics, P.O. Box 9016, Trujillo, La Libertad, 0044, Peru, 51-44-297155, 51-44-247922
Maharaj S Tomar
Affiliation:
mtomar@uprm.edu, University of Puerto Rico, Physics, P.O. Box 9016, Mayaguez, 00680, Puerto Rico
Rahul Singhal
Affiliation:
rahulsinghal_25@yahoo.com, University of Puerto Rico, Physics, P.O. Box 9016, Mayaguez, 00680, Puerto Rico
Oscar P Perez
Affiliation:
operalesperez@yahoo.com, University of Puerto Rico, General Engineering, P.O. Box 9044, Mayaguez, 00680, Puerto Rico
Hector J Jimenez
Affiliation:
hjj@uprm.edu, University of Puerto Rico, Physics, P.O. Box 9016, Mayaguez, 00680, Puerto Rico
Ricardo Martinez
Affiliation:
hjj@uprm.edu, University of Puerto Rico, Physics, P.O. Box 9016, Mayaguez, 00680, Puerto Rico
Get access

Abstract

Zn0.90Co0.10O and Zn0.85[Co0.50Fe0.50]0.15O targets were used to grow thin films by rf magnetron sputtering. XRD patterns of the films showed a strong preferred orientation along c-axis. Zn0.90Co0.10O film showed a transmittance above 75% in the visible range, while the transmittance of the Zn0.85[Co0.50Fe0.50]0.15O film was about 45%; with three absorption peaks attributed to d-d transitions of tetrahedrally coordinated Co2+. The band gap values for Zn0.90Co0.10O and Zn0.85[Co0.50Fe0.50]0.15O films were 2.95 and 2.70 eV respectively, which are slightly less than ZnO bulk. The Zn0.90Co0.10O film showed a relatively large positive magnetoresistance (MR) at the high magnetic field in the temperature range from 7 to 50 K, which reached 11.9% a 7K for the magnetoresistance. The lowest MR was found at 100 K. From M-H curve measured at room temperature shown a probable antiferromagnetic behavior, although was possible to observe little coercive field of 30 Oe and 40 Oe for Zn0.90Co0.10O and Zn0.85[Co0.50Fe0.50]0.15O films, respectively.

Type
Research Article
Copyright
Copyright © Materials Research Society 2007

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Prellier, W., Fouchet, A., and Mercey, B., J Phys.: Condens. Matter 15, R1583–R1601 (2003).Google Scholar
2. Srikant, V. and Clarke, D.R., J. Appl. Phys., 83, (10) 5447 (1998).Google Scholar
3. Ueda, K., Hitoshi, H., and Kawai, T., Appl. Phys. Lett. 79, 988 (2001).Google Scholar
4. Cho, Y. M., Choo, W. K., Kim, H., Kim, D., and Ihm, Y., Appl. Phys. Lett. 80, 3358 (2002).Google Scholar
5. Kim, K. J. and Park, Y. R., Appl. Phys. Lett. 81, (8) 1420 (2002).Google Scholar
6. Pearton, S.J., Heo, W.H., Ivill, M., Norton, D. P. and Steiner, T., Semicond. Sci. Technol. 19, R59–R74 (2004).Google Scholar
7. Kolesnik, S., Dabrowski, B., and Mais, J., J. Appl. Phys., 95, (5), 2582 (2004).Google Scholar
8. Samanta, K., Bhattacharya, P., and Katiyar, R.S., Appl. Phys. Lett. 87, 101903 (2005).Google Scholar
9. Yoo, Y.Z., Fukumura, T., Jin, Z., Hasegawa, K., Kawasaki, M., Ahmet, P., Chikyow, T., and Koinuma, H., J. Appl. Phys., 90, 4246 (2001).Google Scholar
10. Koidi, P., Phys.Rev. B, 15, 2493 (1977).Google Scholar
11. Yang, S.G., Pakhomov, A.B., Hung, S.T, and Wong, C.Y., IEEE Transactions on magnetics, 38, (5) 2877 (2002).Google Scholar
12. Awasthi, N., Bhattacharya, P., and Katiyar, R.S., Mat. Res. Soc. Proc. 825E, G2.7.1 (2004).Google Scholar
13. Lee, Y.R., Ramdas, A.K., and Aggarwal, R.L., Phys. Rev. B, 38, (15) 10 600 (1988).Google Scholar
14. Kim, J.H., Kim, H., Kim, D., Ihm, Y. E., and Choo, W. K., J. Appl. Phys., 92, 6066 (2002).Google Scholar
15. Martinez, R., MS thesis, University of Puerto Rico at Mayaguez, (2006).Google Scholar
16. Zheng-Bin, G., Chang-Sheng, Y., Ming-Hui, L., Wang, J., Wu, D., Shan-Tao, Z., Shi-Ning, Z., Yong-Yuan, Z., and Yan-Feng, Ch., J. Appl. Phys., 98, 053908 (2005).Google Scholar
17. Dietl, T., Ohno, H., and Matsukara, F., Phys Rev. B, 63, 195205–1 (2001).Google Scholar