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Structural, Optical and Electrical Properties of <P> μc-Si:H Very Thin Films Deposited by the VHF-GD Technique

Published online by Cambridge University Press:  16 February 2011

Roger Flückiger ,
J. Meier ,
A. Shah ,
A. Catana ,
M. Brunel ,
H. V. Nguyen ,
R. W. Collins  and
R. Carius
Roger Flückiger
Affiliation:
Institut de Microtechnique, Rue A.-L. Breguet 2, 2000 Neuchâtel, Suisse
J. Meier
Affiliation:
Institut de Microtechnique, Rue A.-L. Breguet 2, 2000 Neuchâtel, Suisse
A. Shah
Affiliation:
Institut de Microtechnique, Rue A.-L. Breguet 2, 2000 Neuchâtel, Suisse
A. Catana
Affiliation:
Prospective et recherche, EPFL, 1015 Lausanne, Suisse
M. Brunel
Affiliation:
Laboratoire de Cristallographie du CNRS, BP 166x, Grenoble Cedex 9, France-38042
H. V. Nguyen
Affiliation:
Materials Research Laboratory, Penn State Univ., University Park, PA 16802, USA
R. W. Collins
Affiliation:
Materials Research Laboratory, Penn State Univ., University Park, PA 16802, USA
R. Carius
Affiliation:
ISI-PV, Forschungszentrum Jülich, P.O. Box 1913, 5170 Julien, Germany
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Abstract

In this paper we present new results for very thin <p> μc-Si:H films (< 350 Å) deposited at low temperature (170 C) by the Very High Frequency - Glow Discharge technique (VHF-GD) at 70 MHz. First, the effect of boron doping on the growth and electrical properties of μc-Si:H very thin films is investigated, leading to an optimised value of about 0.6 % (B2H6/SiH4). Structural properties of an optimised thickness series ranging from 100 to 350 Å are studied using TEM, Raman, grazing angle X-ray diffraction/reflection and spectroscopie ellipsometry. Further, a columnar structure growth model for these very thin <p>-type μc-Si:H films will be proposed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 336: Symposium A – Amorphous Silicon Technology - 1994 , 1994 , 511
Copyright
Copyright © Materials Research Society 1994

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References

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