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Structural, Optical and Electrical Properties of <P> μc-Si:H Very Thin Films Deposited by the VHF-GD Technique

  • Roger Flückiger (a1), J. Meier (a1), A. Shah (a1), A. Catana (a2), M. Brunel (a3), H. V. Nguyen (a4), R. W. Collins (a4) and R. Carius (a5)...

Abstract

In this paper we present new results for very thin <p> μc-Si:H films (< 350 Å) deposited at low temperature (170 C) by the Very High Frequency - Glow Discharge technique (VHF-GD) at 70 MHz. First, the effect of boron doping on the growth and electrical properties of μc-Si:H very thin films is investigated, leading to an optimised value of about 0.6 % (B2H6/SiH4). Structural properties of an optimised thickness series ranging from 100 to 350 Å are studied using TEM, Raman, grazing angle X-ray diffraction/reflection and spectroscopie ellipsometry. Further, a columnar structure growth model for these very thin <p>-type μc-Si:H films will be proposed.

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Structural, Optical and Electrical Properties of <P> μc-Si:H Very Thin Films Deposited by the VHF-GD Technique

  • Roger Flückiger (a1), J. Meier (a1), A. Shah (a1), A. Catana (a2), M. Brunel (a3), H. V. Nguyen (a4), R. W. Collins (a4) and R. Carius (a5)...

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