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Structural Modifications of Amorphized Silicon Surfaces Following Picosecond Laser Irradiation

Published online by Cambridge University Press:  15 February 2011

G.A. ROZGONYI ,
H. Baumgart ,
F. Phillipp ,
R. Uebbing  and
H. Oppolzer
G.A. ROZGONYI
Affiliation:
Max-Planck-Institut für Festkörperforschung
H. Baumgart
Affiliation:
Max-Planck-Institut für Festkörperforschung
F. Phillipp
Affiliation:
Max-Planck-Institut füir Metallforschung, D-7000 Stuttgart, 80, West Germany
R. Uebbing
Affiliation:
Max-Planck-Institut für Festkörperforschung
H. Oppolzer
Affiliation:
Siemens AG, D-8000 Munich, West Germany
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Abstract

We have used cross-section TEM and Nomarski optical microscopy to examine the origin of halo patterns previously observed following picosecond irradiation of ion implantation amorphized Si. The importance of melt depth, quench rate and the incomplete nature of the initial amorphization step are emphasized. A search for a post annealing morphological or microstructural signature related to a plasma activated process proved negative.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 4: Symposium A – Laser and Electron-Beam Interactions with Solids , 1981 , 177
Copyright
Copyright © Materials Research Society 1982

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References

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