Hostname: page-component-84b7d79bbc-2l2gl Total loading time: 0 Render date: 2024-07-31T03:24:10.581Z Has data issue: false hasContentIssue false
  • English
  • Français

Structural factors determining the nanomechanical performance of transition metal nitride films

Published online by Cambridge University Press:  01 February 2011

K. Sarakinos ,
S. Kassavetis ,
P. Patsalas  and
S. Logothetidis
K. Sarakinos
Affiliation:
Aristotle University of Thessaloniki, Department of Physics, GR-54124, Thessaloniki, Greece
S. Kassavetis
Affiliation:
Aristotle University of Thessaloniki, Department of Physics, GR-54124, Thessaloniki, Greece
P. Patsalas
Affiliation:
Aristotle University of Thessaloniki, Department of Physics, GR-54124, Thessaloniki, Greece
S. Logothetidis
Affiliation:
Aristotle University of Thessaloniki, Department of Physics, GR-54124, Thessaloniki, Greece
Get access

Abstract

Chromium nitride (CrN) and Titanium nitride (TiN) thin films were deposited employing unbalanced magnetron sputtering (UBMS) for various values of substrate bias voltage (Vb). The structural characterization of the films in terms of phase identification and the density determination was achieved utilizing X-Ray techniques (XRD and XRR respectively), while the internal stresses were calculated by the change of the substrate's curvature using Stoney's equation. The nanomecahnical properties of the films (hardness and elastic modulus) were investigated using the Nanoindentation (NI) technique in the Continuous Stiffness Measurement (CSM) configuration. According to the NI results the hardness of the films ranges between between 15–25 GPa while the elastic modulus between 180–250 GPa. The analysis revealed that the hardness of the films is maximum when their orientation is pure (either [111] or [100]), while it is minimized under mixed orientation regime. Furthermore, the hardness of the films increases as the internal compressive stresses and the mass density increase. The latter can be validated through the comparison of the results concerning the above films to reported results for TiN films prepared by balanced magnetron sputtering (BMS)

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 843: Symposium T – Surface Engineering-Fundamentals and Applications , 2004 , T7.8
Copyright
Copyright © Materials Research Society 2005

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Stampfl, C., Mannstadt, W., Asahi, R., Freeman, A.J., Phys. Rev. B63, 155106 (2001).Google Scholar
2. Hultman, L., Vacuum 57, 1 (2000).Google Scholar
3. Glocker, D.A, Shat, S.I, “Handbook of thin film process technology”, Institute of Physics, Wilmington, Delaware (1995).Google Scholar
4. Bertrand, G., Savall, C., Meunier, C., Surf. Coat. Technol. 96, 323 (1997).Google Scholar
5. Navansek, B., Panjan, P., Milosev, I., Surf. Coat. Technol. 97, 182 (1997).Google Scholar
6. Sarakinos, K., M. Sc. Thesis, Aristotle University, Thessaloniki (2004).Google Scholar
7. Patsalas, P., Charitidis, C., Logothetidis, S., Surf. Coat. Technol. 125, 335 (2000)Google Scholar
8. Patsalas, P., Logothetidis, S., J. Appl. Phys. 93, 989 (2003).Google Scholar
9. Patsalas, P., Logothetidis, S., J. Appl. Phys. 90, 4725 (2001).Google Scholar
10. Logothetidis, S., Patsalas, P., Sarakinos, K., Charitidis, C., Metaxa, C., Surf. Coat. Tech. 180–181, 637 (2004).Google Scholar
11. Kechagias, V.G., Gioti, M., Logothetidis, S., Benferhat, R., Teer, D., Thin Solid Films 364, 213 (2000).Google Scholar
12. Stoney, G.G., Proc. Roy. Soc. London A82, 172 (1909)Google Scholar
13. Pharr, G.M., Oliver, W.C.; MRS Bulletin, XVII, 28 (1992).Google Scholar
14. Pethica, J.B., Oliver, W.C., Phys. Scr. T19, 61 (1987).Google Scholar
15. JCPDS Powder Diffraction File No. 76–2494Google Scholar
16. JCPDS Powder Diffraction File No. 38–1420Google Scholar
17. Patsalas, P., Gravalidis, C., Logothetidis, S., J. Appl. Phys. 92, 1 December (2004).Google Scholar
18. Bhattacharya, A.K., Nix, W.D., Int. J. Solid Structures 24, 1287 (1988).Google Scholar
19. Gao, H., Chiou, C.H., Lee, J., Int.; J. Solid Structures 29, 2471 (1992).Google Scholar
20. Kittel, C., Introduction to Solid State Physics, 4th edition, J. Willey & Sohns (1971).Google Scholar
21. Marlo, M., Milman, V., Phys. Rev. B62, 2899 (2000).Google Scholar
22. Mathioudakis, C., Kelires, P.C., Panayiotatos, Y., Patsalas, P., Charitidis, C., Logothetidis, S., Phys. Rev. B65, 205203 (2002).Google Scholar
23. Chen, C.T., Song, Y.C., Yu, G.-P., Huang, J.-H.; J. Mater. Eng. Perform. 7, 324 (1998).Google Scholar
24. Hultman, L., Shinn, M., Mirkarimi, P.B., Barnett, S.A., J. Cryst. Growth 135, 309 (1994).Google Scholar