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The Structural Evolution of A-SI:H Films Prepared by Pulse Rf Power Modulation with Hydrogen and Helium Dilution

Published online by Cambridge University Press:  10 February 2011

Yeu-Long Jiang ,
Min-Chang Lee  and
Shieng-Huai Chen
Yeu-Long Jiang
Affiliation:
Department of Electrical Engineering, National Chung Hsing University, Taichung 40227, Taiwan
Min-Chang Lee
Affiliation:
Department of Electrical Engineering, National Chung Hsing University, Taichung 40227, Taiwan
Shieng-Huai Chen
Affiliation:
Department of Electrical Engineering, National Chung Hsing University, Taichung 40227, Taiwan
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Abstract

A-Si:H films were deposited in a PECVD system using 5k to 5 Hz and 25 to 75% duty cycle square-wave pulse modulation RF power and with 80% hydrogen or 80% helium dilution. The transmission and the microstructure of the hydrogen bonding configuration were measured using NIR-VIS-UV and FTIR spectrometers. The powder formation in the reactor chamber was low for a deposition rate less than 5.87 nm/min and was completely suppressed by the 500 Hz pulse RF power with a duty cycle less than 33.3%. The low microstructure R ratio is the result of the reduction of the polymization reaction in the plasma for a low deposition process. A R ratio less than 14% could be obtained using 500 Hz with a duty cycle less than 33.3% for helium dilution or using 5k to 50 Hz with a duty cycle less than 50% for hydrogen dilution. The refractive index of the films is high for the films with low R ratio. The more compact and higher quality films exhibit greater SiH bonding configurations in the a-Si:H films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 507: Symposium A – Amorphous & Microcrystalline Silicon Technology 1998 , 1998 , 523
Copyright
Copyright © Materials Research Society 1998

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References

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