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Structural Equilibration in Pure and Hydrogenated Amorphous Silicon

Published online by Cambridge University Press:  01 January 1993

Gerhard Müller  and
Gerhard KrÖtz
Gerhard Müller
Affiliation:
Deutsche Aerospace AG,,Postfach 80 11 09, 8000 M ünchen 80, Germany
Gerhard KrÖtz
Affiliation:
Deutsche Aerospace AG,,Postfach 80 11 09, 8000 M ünchen 80, Germany
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Abstract

Chemically pure (a-Si) and hydrogenated amorphous silicon (a-Si:H) are metasta- ble materials which are thermodynamically unstable with respect to crystalline silicon (c-Si). In both materials, however, partial thermal equilibria can be established between certain structural, configurational and electronic degrees of freedom. The present paper discusses experiments on both amorphous (a-) materials showing that two kinds of structural change can take place within random Si networks: structural relaxation and configurational equilibration. The first process can be observed in both materials indicating that it is supported by intrinsic degrees of freedom of the random Si networks. During these changes partial thermal equilibria between distorted and broken bonds are established via irreversible and relatively long-range relaxation processes. The second kind of change can only be observed in a-Si:H, indicating that it is H-related. The H-related degrees of freedom support reversible valence alternation reactions in which the local bonding configuration of the dopant and defect sites is changed and in which their charge states are altered. These latter interactions establish a strong coupling between the electronic system and the configurational degrees of freedom of the random Si networks. Formally, these latter changes bear strong similarity to the electrochemical processes that take place in liquid electrolytes.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 297: Symposium A – Amorphous Silicon Technology - 1993 , 1993 , 237
Copyright
Copyright © Materials Research Society 1993

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References

REFERENCES

1. Kakalios, J. and Street, R.A., in. Amorphous Silicon and Related Materials”, (1988), Fritsche, H. ed. (World Scientific Publishing Company, Singapore), p. 165; Jackson, W.B. and Kakalios, J., (1988), p.247.Google Scholar
2. Powell, M.J., van Berkel, C. and Deane, S C., J. Non-Cryst. Solids 137&138 (1991) 1215.Google Scholar
3. Nickel, N., Fuhs, W. and Mell, H., Phil. Mag. B61 (1990) 251.Google Scholar
4. Liu, E.Z. and Spear, W.E., J. Non-Cryst. Solids 137&138 (1991) 167.Google Scholar
5. Pierz, K., Fuhs, W. and Mell, H., Phil. Mag. B63(1991) 123.Google Scholar
6. Street, R.A., private communication.Google Scholar
7. Street, R.A., Kakalios, J., Tsai, C.C. and Hayes, T.M., Phys. Rev. B35 (1987) 1316; Kakalios, J. and Jackson, W.B., in “Amorphous Silicon and Related Materials”. Fritsche, H. ed. (1988), World Scientific Publ. Comp. (Singapore) , p.207.Google Scholar
8. Stutzmann, M., Phil. Mag. B60 (1989) 531.Google Scholar
9. Thompson, M.O., Galvin, G.J., Mayer, J.W., Peercy, P.S., Poate, J.M., Jacobson, D.C., Cullis, A.G. and Chew, N.G., Phys. Rev Lett. 52 (1984) 2360 Google Scholar
10. Roorda, S., Sinke, W.C., Poate, J.M., Jacobson, D.C., Dierker, S., Dennis, B.S., Eaglesham, D.J., Spaepen, F. and Fuoss, P., Phys. Rev. B44 (1991) 3702.Google Scholar
11. Roorda, S., Doom, S., Sinke, W.C., Scholte, P.M.L.O. and van Loenen, E., Phys. Rev. Lett. 62 (1989)1880.Google Scholar
12. Donovan, E.P., Spaepen, F., Poate, J.M. and Jacobson, D.C., Appl. Phys. Lett. 55 (1989) 1516.Google Scholar
13. Csepregi, L., Kennedy, E.F., Gallagher, T.J. and Mayer, J.W., J. Appl. Phys. 48 (1977) 4234.Google Scholar
14. Donovan, E.P., Spaepen, F., Turnbull, D., Poate, J.M. and Jacobson, D.C., J. Appl.Phys. 57 (1985) 1795.Google Scholar
15. Roorda, S. and Sinke, W.C., Mat. Res. Soc. Symp. Proc. Vol.205 (1992) 9.Google Scholar
16. Thomas, P.A.. Brodsky, M.H., Kaplan, D. and Lepine, D., Phys. Rev. B18 (1978) 3059.Google Scholar
17. Stuke, J. Proc. 7th Int. Conf. on Amorphous and Liquid Semiconductors, Spear, W.E. ed. (CICL, University of Edinburgh), p.406 Google Scholar
18. Coffa, S., private communication.Google Scholar
19. Sinke, W.C., Warabisako, T., Miyao, M., Tokuyama, T., Roorda, S. and Saris, F.W., J. Non-Cryst. Solids 99 (1988) 308.Google Scholar
20. Beeman, D., Tsu, R. and Thorpe, M.G., Phys. Rev. B32 (1985) 874.Google Scholar
21. Tsu, R., Gonzalez-Hernandez, J. and Polk, F.H., J. Non-Cryst. Solids 66 (1984) 109.Google Scholar
22. Ruttensperger, B.. Müller, G. and Krötz, G., Phil. Mag. (1993, in print).Google Scholar
23. Stolk, P.A., Calcagnile, L., Roorda, S., Sinke, W.C., Berntsen, A.J.M. and der Weg, F. van, Appl. Phys. Lett. 60 (1992) 1688.Google Scholar
24. Bar-Yam, Y., Adler, D. and Joannopoulos, J.D., Phys. Rev. Lett. 57 (1986) 467.Google Scholar
25. Smith, ZE and Wagner, S., Phys. Rev. Lett.59 (1987) 688 Google Scholar
26. Street, R.A. and Winer, K., Phys. Rev. B40 (1989) 6236.Google Scholar
27. Ley, L., in: “Hydrogenated Amorphous Silicon, vol.II” ed. by Joannopoulos, J.D. and Luckovsky, G. (Berlin, Heidelberg, New York, Tokyo, Springer Topics Applied Physics, vol.56), p.61.Google Scholar
28. Staebler, D.L. and Wronski, C.R., Appl. Phys. Lett. 31 (1977) 292.Google Scholar
29. Street, R.A. and Hack, M., J. Non-Cryst. Solids 137&138 (1991) 263.Google Scholar
30. Street, R.A., Phys. Rev. Lett. 49 (1982) 1187.Google Scholar
31. Johnson, N.M., J. Non-Cryst. Solids 137&138 (1991) 101.Google Scholar
32. Müller, G. and Krötz, G.: Appl. Phys. A 54 (1992) 40. Google Scholar
33. Müller, G., Kalbitzer, S. and Mannsperger, H., Appl. Phys. A39 (1986) 243.Google Scholar
34. Krötz, G., Wind, J., Stitzl, H., Müller, G., Kalbitzer, S. and Mannsperger, H., Phil.Mag. B63 (1991) 101; G. Krötz and G. Müller, J. Non-Cryst. Solids 137& 138 (1991) 163.Google Scholar
35. Hartmann, E., Behm, R.J., Krötz, G., Müller, G. and Koch, F., Appl. Phys. Lett. 59 (1991) 2136; Hartmann, E., Enachescu, M., Koch, F., Krötz, G., Müller, G., Behm, R.J., J. Non-Cryst. Solids 137& 138 (1991) 1067.Google Scholar