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Structural Defects related issues of GaN-based Laser Diodes

  • Shigetaka Tomiya (a1), Motonobu Takeya (a2), Shu Goto (a2) and Masao Ikeda (a2)

Abstract

Structural defects affecting the lifetime of GaN-based laser diodes (LDs) on epitaxial lateral overgrown (ELO) GaN layers have been investigated. Almost all of the threading dislocations that appeared in the wing regions have edge character, whereas the dislocations at the coalescence boundaries have both edge character and mixed character. The origins of the threading dislocations in the wing regions are the lateral extension of dislocations from the seed regions that contingently bend upwards to the epi-surface. Thus, edge dislocations are most considerable threading dislocations in GaN-based LDs on ELO GaN layers, since the laser stripes are fabricated in the wing regions. In the degraded LDs, neither dislocation multiplication from the threading dislocations nor any structural changes of the threading dislocations were observed. This indicates that degradation is not caused by dislocation multiplication at the active layers, which is usually observed in LDs featuring zincblende-based structures. Although the threading dislocations in the LD stripes do not multiply during device operation, our degradation experiments revealed that the lifetime of the GaN-based LDs depends on the dislocation density. The degradation rate was almost proportional to the square root of the aging time. Our results indicate that degradation is governed by a diffusion process, and a detailed degradation mechanism is proposed.

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1. Amano, H., Sawaki, N., Akasaki, I., and Toyoda, Y., Appl. Phys. Lett., 48, 353355, (1986).
2. Tojyo, T., Asano, T., Takeya, M., Hino, T., Kijima, S., Goto, S., Uchida, S., and Ikeda, M., Jpn. J. Appl. Phys., 40, 32063210, (2001).
3. Nagahama, S., Iwasa, N., Senoh, M., Matsushita, T., Sugimoto, Y., Kiyoku, H., Kozaki, T., Sano, M., Matsumura, H., Umemoto, H., Chocho, K. and Mukai, T., Jpn. J. Appl. Phys. 39, L647650, (2000).
4. Sugahara, T., Sato, H., Hao, M., Naoi, Y., Kurai, S., Tottori, S., Yamashita, Y., Nishino, K., Romano, L.T., and Sakai, S., Jpn. J. Appl. Phys., 37, L398400, (1998).
5. Ueda, O., “Reliability and Degradation of III-V Optical Devices” (Artech House, Boston, 1996).
6. Zheleva, Tsvetanka S., Smith, Scott A., Thomson, Darren B., Linthicum, Kevin J., Rajagopal, Pradeep, and Davis, Robert F., J. Electron. Mater., 28, L6L8, (1999).
7. Linthicum, Kevin J., Gehrke, Thomas, Thomson, Darren, Carlson, Eric, Rajagopal, Pradeep, Smith, Tm, Batchelor, Dale, and Davis, Robert, Appl. Phys. Lett., 75, 196198, (1999).
8. Hino, T., Tomiya, S., Miyajima, T., Yanashima, K., Hashimoto, S. and Ikeda, M., Appl. Phys. Lett., 76, 3421, (2000).
9. Sakai, Akira, Sunakawa, Haruo and Usui, Akira, Appl. Phys. Lett., 71, 22592261, (1999).
10. Suzuki, K. and Takeuchi, S., Phil. Mag. Lett., 423428, (1999).
11. Tomiya, S., Morita, E., Ukita, M., Okuyama, H., Itoh, S., Nakano, K. and Ishibashi, A., Appl. Phys. Lett., 66, 12081210, (1995).
12. Peach, M. and Koehler, J.S., Phys, Rev., 80, 436439, (1950).
13. Sugiura, Lisa, J. Appl. Phys., 81, 16331638, (1997).
14. Maeda, K., Suzuki, K., Ichihara, M., Nishiguchi, S., Ono, K., Mera, Y., Takeuchi, S., Physica B 273–274, 134139, (1999).
15. Uchida, Shiro, Takeya, Motonobu, Ikeda, Shiro, Mizuno, Takashi, Fujimoto, Tsuyoshi, Matsumoto, Osamu, Goto, Shu, Tojyo, Tsuyoshi, and Ikeda, Masao, IEEE J. S. Quantum Electronics, 9, 12521259, (2003).
16. Goto, S., Tamamura, K., Matsumoto, O., Tojyo, T., Sasaki, T., Yabuki, Y., Naganuma, K., Asatsuma, T., Tomiya, S., Uchida, S., and Ikeda, M., presented at the Late News Abstract, 2003 Electronic Materials Conf., Santa Barbara, CA, 2002, V9.
17. Tomiya, S., Goto, S., Takeya, M. and Ikeda, M., MRS proceedings 743, 843, (2002).
18. Hansen, M., Chen, L.F., Lim, S.H., DenBaars, S.P., and Speck, J.S., Appl. Phys. Lett., 80, 24692471, (2002).

Structural Defects related issues of GaN-based Laser Diodes

  • Shigetaka Tomiya (a1), Motonobu Takeya (a2), Shu Goto (a2) and Masao Ikeda (a2)

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