Skip to main content Accessibility help
×
Home

Structural Defects in GaN-based Materials and Their Relation to GaN-based Laser Diodes

  • Shigetaka Tomiya (a1), Masao Ikeda (a2), Shinji Tanaka (a3), Yuya Kanitani (a4), Tadakatsu Ohkubo (a5) and Kazuhiro Hono (a6)...

Abstract

Reduction of structural defects in III-nitride based optical devices is of critical importance for high efficient and high reliable optoelectronic performance. Here, three different types of structural defects such as threading dislocations, Mg-related pyramidal defects and columnar defects, observed in GaN-related epitaxial films are described and their relation to reliability of GaN-based LDs is discussed. Composition fluctuations of GaInN MQWs with different In concentrations by analyzed by a laser assisted 3D atom probe are also described.

Copyright

References

Hide All
1. Nakamura, S., et al., Appl. Phys. Lett., 70, 868 (1997).10.1063/1.118300
2. Morkoc, H., Nitride Semiconductors and Devices (Springer, Berlin, 1999).10.1007/978-3-642-58562-3
3. Ueda, O., Reliability and Degradation of III-V Optical Devices (Boston, MA: Artech, 1996).
4. Zheleva, T. S., et al., J. Electron. Mater., 28, L6 (1999).10.1007/s11664-999-0239-z
5. Tomiya, S., et l., IEEE J. Quantum Electron., 10, 1277 (2004).10.1109/JSTQE.2004.837735
6. Petroff, P. M., Semiconductor and Insulators, 5, 307 (1983).
7. Ueda, O., OYO BUTURI, 78, 316 (2009) in Japanese.
8. Liliental-Weber, Z., et al., Appl. Phys. Lett., 75, 4159 (1999).10.1063/1.125568
9. Vennéguès, P., et al., Appl. Phys. Lett., 77, 880. (2000).10.1063/1.1306421
10. Tomiya, S., Goto, S., Takeya, M. and Ikeda, M., Mat. Res. Symp. Proc., 743, 839 (2003).
11. Hansen, M., et al.. Appl. Phys. Lett., 80, 2469 (2002)10.1063/1.1467704
12. Tojyo, T., et al., Jpn. J. Appl. Phys., 40, 3206 (2001).10.1143/JJAP.40.3206
13. Ho, I. and Stringfellow, G. B., Appl.Phys.Lett. 69, 2701 (1996).10.1063/1.117683
14. Rao, M., Kim, D., and Mahajan, S., Appl. Phys. Lett. 85, 1961 (2004).10.1063/1.1791327
15. Westmeyer, A. N. and Mahajan, S., Appl. Phys. Lett. 79, 2710 (2001).10.1063/1.1411984
16. Ohta, M., et al., phys. stat. sol. (a) 204, 2068 (2007).10.1002/pssa.200674748
17. Tomiya, S., et al., phys. stat. sol. (a) 3, 1779 (2006).
18. Goto, O., et al., Proc. of SPIE, 6485, 64850Z, (2007).10.1117/12.725162
19. Thompson, K., et al., Appl. Phys. Lett. 87, 052108 (2005).10.1063/1.2005368
20. Hoummada, K. et al., Appl. Phys. Lett. 89, 181905 (2006).10.1063/1.2370501
21. Galtery, et al., J. Apply. Phys. 104, 013524 (2008).10.1063/1.2938081
22. Moody, M. P., et al., Micro.Res. Tech. 71, 542 (2008).10.1002/jemt.20582

Keywords

Structural Defects in GaN-based Materials and Their Relation to GaN-based Laser Diodes

  • Shigetaka Tomiya (a1), Masao Ikeda (a2), Shinji Tanaka (a3), Yuya Kanitani (a4), Tadakatsu Ohkubo (a5) and Kazuhiro Hono (a6)...

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed