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Structural Characterization of GaN Epilayers Grown on Patterned Sapphire Substrates

  • Chang-Soo Kim, Ji-Hyun Moon (a1), Sang-Jun Lee (a1), Sam-Kyu Noh (a1), Je Won Kim (a2), Kyuhan Lee (a2), Yong Dae Choi (a3) and Jay P. Song (a4)...

Abstract

The structural properties of GaN epitaxial layers grown on patterned sapphire substrates by MOCVD have been investigated using HRXRD(high-resolution X-ray diffraction), GIXRD(grazing incidence X-ray diffraction) and PL(photoluminescence). For X-ray characterizations rocking curves for GaN (10·5), (00·2), (11·4) and (11·0) reflections for which incidence angles of X-rays are 32.0°, 17.3°, 11.0° and 0.34°, respectively, were measured. For (10·5), (00·2) and (11·4) reflections FWHMs of the rocking curves for a patterned substrate were broader than those for a unpatterned substrate, for (11·0) reflection, however, FWHM for a patterned substrate was much narrower than that for a unpatterned substrate. The normalized FWHM for all reflections decreases as the incidence angle of X-ray decreases. The results indicate that the crystalline quality in the surface region of the epilayer on a patterned substrate was especially improved because the penetration depth of X-ray depends on the incidence angle. The intensity of PL peak of the epilayer for a patterned substrate increased compared to that for a unpatterned substrate, and the increase in PL intensity is attributed to the reduction in dislocation density at the surface region revealed the by X-ray results.

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