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Structural and Optical Properties of Homoepitaxial GaN Layers

Published online by Cambridge University Press:  10 February 2011

J. M. Baranowski ,
Z. Liliental-Weber ,
K. Korona ,
K. Pakuła ,
R. Stępniewski ,
A. Wysmołek ,
I. Grzegory ,
G. Nowak ,
S. Porowski  and
B. Monemar
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J. M. Baranowski
Affiliation:
Institute of Experimental Physics, University of Warsaw, Hoza 69, 00-681 Warsaw, POLAND, High Pressure Research Centre Polish Academy of Sciences, Sokolowska 29/37, 01--142 Warsaw, POLAND,
Z. Liliental-Weber
Affiliation:
Centre for Advanced Materials, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA,
K. Korona
Affiliation:
Institute of Experimental Physics, University of Warsaw, Hoza 69, 00-681 Warsaw, POLAND,
K. Pakuła
Affiliation:
Institute of Experimental Physics, University of Warsaw, Hoza 69, 00-681 Warsaw, POLAND,
R. Stępniewski
Affiliation:
Institute of Experimental Physics, University of Warsaw, Hoza 69, 00-681 Warsaw, POLAND,
A. Wysmołek
Affiliation:
Institute of Experimental Physics, University of Warsaw, Hoza 69, 00-681 Warsaw, POLAND,
I. Grzegory
Affiliation:
High Pressure Research Centre Polish Academy of Sciences, Sokolowska 29/37, 01--142 Warsaw, POLAND,
G. Nowak
Affiliation:
High Pressure Research Centre Polish Academy of Sciences, Sokolowska 29/37, 01--142 Warsaw, POLAND,
S. Porowski
Affiliation:
High Pressure Research Centre Polish Academy of Sciences, Sokolowska 29/37, 01--142 Warsaw, POLAND,
B. Monemar
Affiliation:
Department of Physics and Measurements Technology, Likoping University, S-581 83 Linkoping, SWEDEN
P. Bergman
Affiliation:
Department of Physics and Measurements Technology, Likoping University, S-581 83 Linkoping, SWEDEN
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Abstract

The review of structural and optical properties of homoepitaxial layers grown by MOVCD on single crystals GaN substrates is presented. The TEM technique is used to characterise the structural properties of epi-layers. It is found that the structural properties of GaN homoepitaxial layers are determined by the polarity of the substrate surface on which the growth takes place. It is shown that threading dislocations are present only in the layers grown on the [0001] “smooth” surface. On the other hand the layers grown on the [0001] “rough” surface are free from vertical defects. The characteristic feature of the growth on the “rough” surface are pinholes. The optical properties of homoepitaxial layers are predominantly determined by the growth polarity as well. It is shown also that the reflectivity measurement is the most precise way to determine the exciton energies and that emissions due to free excitons are strongly affected by polariton effects.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 449: Symposium N – III-V Nitrides , 1996 , 393
Copyright
Copyright © Materials Research Society 1997

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References

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