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Structural and Optical Characteristics of Laterally Overgrown GaN Pyramids on (111) Si Substrate

Published online by Cambridge University Press:  21 March 2011

Yong-Hoon Cho ,
H. M. Kim ,
T. W. Kang ,
J. J. Song  and
W. Yang
Yong-Hoon Cho
Affiliation:
Department of Physics, Chungbuk National University, Cheongju 361-763, Korea
H. M. Kim
Affiliation:
Quantum-Functional Semiconductor Research Center and Department of Physics, Dongguk University, Seoul 100-715, Korea
T. W. Kang
Affiliation:
Quantum-Functional Semiconductor Research Center and Department of Physics, Dongguk University, Seoul 100-715, Korea
J. J. Song
Affiliation:
Center for Laser and Photonics Research and Department of Physics, Oklahoma State University, Stillwater, OK 74078
W. Yang
Affiliation:
Honeywell Technology Center, 12001 State Highway 55, Plymouth, MN 55441
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Abstract

Structural and optical characteristics of laterally overgrown GaN pyramids on a (111) Si substrate were investigated by scanning electron microscopy, transmission electron microscopy (TEM), and cathodoluminescence (CL) microscopy and spectroscopy. Cross-sectional TEM images revealed that the threading dislocation density over the window openings is very high, but gradually decreases with increasing GaN thickness, and that dislocations observed over the mask are parallel to the mask interface. Cross-sectional-view CL images taken at different emission wavelengths clearly showed significant differences between the overgrown areas on top of the mask and the coherently grown regions over the windows. A clear reverse contrast in the cross-sectional CL images of bandedge (identical contrast in case of yellow-band) emission was observed by comparing the defect density observed in cross-sectional TEM images. The CL peak intensity ratio of band-edge-emission to yellow luminescence was also investigated as a function of position in the GaN pyramid cross section. It was demonstrated that there exists a strong correlation between structural defects and optical properties in laterally overgrown GaN pyramids on (111) Si substrate.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 693 , 2001 , I3.17.1
Copyright
Copyright © Materials Research Society 2002

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References

1. Sakai, A., Sunakawa, H., and Usui, A., Appl. Phys. Lett. 71, 2259 (1997); Appl. Phys. Lett. 73, 481 (1998).Google Scholar
2. Zheleva, T. S., Nam, O. H., Bremser, M. D., and Davis, R. F., Appl. Phys. Lett. 71, 2472 (1997); O. H. Nam, M. D. Bremser, T. S. Zheleva, and R. F. Davis, Appl. Phys. Lett. 71, 2638 (1997).Google Scholar
3. Mao, Z., McKernan, S., Carter, C. B., Yang, W., and McPherson, S. A., MRS Internet J. Nitride Semicond. Res. 4S1, G3.13 (1999).Google Scholar
4. Tanaka, S., Kawaguchi, Y., Sawaki, N., Hibino, M., and Hiramatsu, K., Appl. Phys. Lett. 76, 2701 (2000).Google Scholar
5. Li, X., Bishop, S. G., and Coleman, J. J., Appl. Phys. Lett. 73, 1179 (1998).Google Scholar
6. Yu, Z. H., Johnson, M. A. L., Mcnulty, T., Brown, J. D., Cook, J. W., and Schetzina, J. F., MRS Internet J. Nitride Semicond. Res. 3, 6 (1998).Google Scholar
7. Li, X., Bohn, P. W., Coleman, J. J., Appl. Phys. Lett. 75, 4049 (1999).Google Scholar
8. Bidnyk, S., Little, B. D., Cho, Y. H., Krasinski, J., Song, J. J., Yang, W., and McPherson, S. A., Appl. Phys. Lett. 73, 2242 (1998).Google Scholar
9. Liu, Q. K. K., Hoffmann, A., Siegle, H., Kaschner, A., Thomsen, C., Christen, J., and Bertram, F., Appl. Phys. Lett. 74, 3122 (1999).Google Scholar