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Structural and Magnetic Characterization of MOCVD Grown GaMnN and GaFeN Nanostructures

Published online by Cambridge University Press:  01 February 2011

Shalini Gupta ,
Hun Kang ,
Matthew H. Kane ,
Eun Hyun Park  and
Ian T. Ferguson
Shalini Gupta
Affiliation:
guptasha@ece.gatech.edu, Georgia Institute of Technology, School of Electrical and Computer Engineering, 777 Atlantic Dr., Atlanta GA 30332-0250, United States
Hun Kang
Affiliation:
hunkang@ece.gatech.edu, Georgia Institute of Technology, School of Electrical and Computer Engineering, 777 Atlantic Dr., Atlanta, GA, 30332-0250, United States
Matthew H. Kane
Affiliation:
mhkane@ece.gatech.edu, Georgia Institute of Technology, School of Electrical and Computer Engineering, 777 Atlantic Dr., Atlanta, GA, 30332-0250, United States
Eun Hyun Park
Affiliation:
ehpark@ece.gatech.edu, Georgia Institute of Technology, School of Electrical and Computer Engineering, 777 Atlantic Dr., Atlanta, GA, 30332-0250, United States
Ian T. Ferguson
Affiliation:
ianf@ece.gatech.edu, Georgia Institute of Technology, School of Electrical and Computer Engineering, 777 Atlantic Dr., Atlanta, GA, 30332-0250, United States
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Abstract

The growth of Ga1-xMnxN and Ga1-xFexN nanostructures was carried out by MOCVD. Introduction of transition metals (TM) Mn and Fe in GaN nanostructures enhanced the nucleation of the nanostructures resulting in reduced lateral dimensions and increased nanostructure density. The Ga1-xMnxN nanostructures showed hysteresis behavior at 5K. Room temperature ferromagnetism was obtained in the Ga1-xFexN nanostructures unlike its bulk counterpart. This paper presents the growth and magnetization study of Ga1-xTMxN nanostructures. These structures could be used to enhance the efficiency of spintronic devices.

Keywords

nanostructureferromagneticchemical vapor deposition (CVD) (deposition)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 959: Symposium M – Quantum Dots—Growth, Behavior and Applications , 2006 , 0959-M17-24
Copyright
Copyright © Materials Research Society 2007

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References

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