The structural and electrical properties of thin films of undoped and indium-doped cadmium selenide deposited on glass substrates have been investigated. The as-deposited films were found to be microcrystalline with grain size less than 10 nm. Grain growth occurred upon annealing. Enhanced grain growth was observed in the indium doped films. Transmission electron microscopy of in-situ annealed films revealed the formation of large single crystal areas having cubic structure with <111> as the dominant orientation. The resistivity and the effective electron mobility of polycrystalline cadmium selenide films were investigated as function of annealing conditions and device channel length. Reduction of the electrical resistivity and increase of the electron mobility was observed in devices with channel lengths less than 25μm.