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Structural and Chemical Characterization of Tungsten Gate Stack for 1 Gb Dram

  • O. Gluschenkov (a1), J. Benedict (a1), L.A. Clevenger (a1), P. DeHaven (a1), C. Dziobkowski (a1), J. Faltermeier (a1), C. Lin (a2), I. McStay (a2) and K. Wong (a1)...

Abstract

Material interaction during integration of tungsten gate stack for 1 Gb DRAM was investigated by Transition Electron Microscopy (TEM), X-ray Diffraction analysis (XRD) and Auger Electron Spectroscopy (AES). During selective side-wall oxidation tungsten gate conductor undergoes a structural transformation. The transformation results in the reduction of tungsten crystal lattice spacing, re-crystallization of tungsten and/or growth of grains. During a highly selective oxidation process, a relatively small but noticeable amount of oxygen was incorporated into the tungsten layer. The incorporation of oxygen is attributed to the formation of a stable WO x (x<2) composite.

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