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Structural Analysis in Low-V-defect Blue and Green GaInN/GaN Light Emitting Diodes

Published online by Cambridge University Press:  01 February 2011

Mingwei Zhu ,
Theeradetch Detchprohm ,
Yong Xia ,
Wei Zhao ,
Yufeng Li ,
Jayantha Senawiratne ,
Shi You ,
Lianghong Liu ,
Edward A. Preble  and
Drew Hanser
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Mingwei Zhu
Affiliation:
zhum@rpi.edu, Rensselaer Polytechnic Institute, Department of Physics, Applied Physics, and Astronomy, 110 8th Street, Troy, NY, 12180, United States, 518-276-2814, 518-276-8042
Theeradetch Detchprohm
Affiliation:
zhum@rpi.edu, Rensselaer Polytechnic Institute, Future Chips Constellation, 110 Eighth Street, Troy, NY, 12180, United States
Yong Xia
Affiliation:
zhum@rpi.edu, Rensselaer Polytechnic Institute, Future Chips Constellation, 110 Eighth Street, T roy, NY, 12180, United States
Wei Zhao
Affiliation:
zhum@rpi.edu, Rensselaer Polytechnic Institute, Future Chips Constellation, 110 Eighth Street, Troy, NY, 12180, United States
Yufeng Li
Affiliation:
zhum@rpi.edu, Rensselaer Polytechnic Institute, Future Chips Constellation, 110 Eighth Street, T roy, NY, 12180, United States
Jayantha Senawiratne
Affiliation:
zhum@rpi.edu, Rensselaer Polytechnic Institute, Future Chips Constellation, 110 Eighth Street, Troy, NY, 12180, United States
Shi You
Affiliation:
zhum@rpi.edu, Rensselaer Polytechnic Institute, Future Chips Constellation, 110 Eighth Street, T roy, NY, 12180, United States
Lianghong Liu
Affiliation:
zhum@rpi.edu, Kyma Technologies, Inc., 8829 Midway West Road, Raleigh, NC, 27617, United States
Edward A. Preble
Affiliation:
zhum@rpi.edu, Kyma Technologies, Inc., 8829 Midway West Road, Raleigh, NC, 27617, United States
Drew Hanser
Affiliation:
zhum@rpi.edu, Kyma Technologies, Inc., 8829 Midway West Road, Raleigh, NC, 27617, United States
Christian Wetzel
Affiliation:
wetzel@rpi.edu, Rensselaer Polytechnic Institute, Future Chips Constellation, 110 Eighth Street, Troy, NY, 12180, United States
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Abstract

In this study, we characterized the structural defects in blue and green GaInN/GaN LEDs grown on c-plane bulk GaN and sapphire substrates. Low density large V-defects with diameters around 600 nm were found in the blue LEDs on bulk GaN. They were initiated by edge-type threading dislocations (TDs) around the homoepitaxial growth interface. On the other hand, a high density 7×109 cm−2 of smaller V-defects with sidewalls on {1101} facets was observed in the active region of green LEDs on sapphire. Their diameter ranges from 150 to 200 nm. Misfit dislocations (MDs) generated in the quantum wells are found to initiate these V-defects. With optimizing the epitaxial growth conditions, the generation of MDs and their smaller V-defects was largely suppressed. As a result, the light output power improved by one order of magnitude. For green LEDs on bulk GaN, another unique type of defect was found in the active region: an inclined dislocation pair (IDP). In it a pair of dislocations propagate at a tilt angle of 18 to 23° from the [0001] growth direction towards <1100>. This defect seems to be a path of strain relief in the high indium composition quantum wells.

Keywords

nitridetransmission electron microscopy (TEM)defects
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1040: Symposium Q – Nitrides and Related Bulk Materials , 2007 , 1040-Q03-02
Copyright
Copyright © Materials Research Society 2008

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