Hostname: page-component-84b7d79bbc-rnpqb Total loading time: 0 Render date: 2024-07-28T22:42:56.178Z Has data issue: false hasContentIssue false
  • English
  • Français

Structrual Characterization and Raman Scattering of Epitaxial Aluminum Nitride Thin Films on Si(111)

Published online by Cambridge University Press:  25 February 2011

W. J. Meng ,
T. A. Perry ,
J. Heremans  and
Y. T. Cheng
W. J. Meng
Affiliation:
General Motors Research Laboratories, Warren, Michigan 48090
T. A. Perry
Affiliation:
General Motors Research Laboratories, Warren, Michigan 48090
J. Heremans
Affiliation:
General Motors Research Laboratories, Warren, Michigan 48090
Y. T. Cheng
Affiliation:
General Motors Research Laboratories, Warren, Michigan 48090
Get access

Abstract

Thin films of aluminum nitride were grown epitaxially on Si(111) by ultra-high-vacuum dc magnetron reactive sputter deposition. Epitaxy was achieved at substrate temperatures of 600° C or above. We report results of film characterization by x-ray diffraction, transmission electron microscopy, and Raman scattering.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 242: Symposium G – Wide Band-Gap Semiconductors , 1992 , 469
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Yoshida, S., Misawa, S., Fujii, Y., Takada, S., Hayadawa, H., Gonda, S., and Itoh, A., J. Vac. Sci. Technol. 16, 990 (1979).CrossRefGoogle Scholar
2. Westwood, A. D. and Notis, M. R., JOM June 1991, p. 10.Google Scholar
3. Koide, Y., Itoh, N., Itoh, K., Sawaki, N., and Akasaki, I., Jpn. J. Appl. Phys. 27, 1156 (1988).Google Scholar
4. Morita, M., Isogai, S., Shimizu, N., Tsubouchi, K., and Mikishiba, N., Jpn. J. Appl. Phys. 20, L173 (1981).CrossRefGoogle Scholar
5. Noreika, A. J., Francombe, M. H., and Zeitman, S. A., NASA Rep. CR-86395, Contract NAS 12–568 (1969).Google Scholar
6. Meng, W. J., Heremans, J., and Cheng, Y. T., Appl. Phys. Lett. 59, 2097 (1991).Google Scholar
7. Meng, W. J., Sell, J. A., and Waldo, R. A., J. Vac. Sci. Technol. A9, 2183 (1991).Google Scholar
8. Ishizaka, A. and Shiraki, Y., J. Electrochem. Soc. 133, 666 (1986).Google Scholar
9. Sell, J. A., Meng, W. J., and Perry, T. A., to be published in J. Vac. Sci. Technol. A.Google Scholar
10. Massalski, T. B., Ed., Binary Alloy Phase Diagrams, (ASM International, Materials Park, OH, 1990), p. 176.Google Scholar
11. Hirsch, P., Howie, A., Nicholson, R. B., Pashley, D. W., and Whelan, M. J., Electron Microscopy of Thin Crystals (R. E. Krieger, Malabar, FL, 1977).Google Scholar
12. Temple, P. A. and Hathaway, C. E., Phys. Rev. B7, 3685 (1973).Google Scholar
13. Loudon, R., Adv. Phys. 13, 423 (1964).CrossRefGoogle Scholar
14. Brafman, O., Lengyel, G., Mitra, S. S., Gielisse, P. J., Plendl, J. N., and Mansur, L. C., Solid State Comm. 6, 523 (1968).Google Scholar