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Strong Blue and Violet Light Emission from Silicon- and Germanium-Implanted Silicon-Dioxide Films

Published online by Cambridge University Press:  10 February 2011

L. Rebohle ,
I. E. Tyschenko ,
J. Von Borany ,
B. Schmidt ,
R. Grötzschel ,
A. Markwitz ,
R. A. Yankov ,
H. Fröb  and
W. Skorupa
L. Rebohle
Affiliation:
Institut für Ionenstrahlphysik und Materialforschung, Forschungszentrum Rossendorf e. V., D-01314 Dresden, Germany
I. E. Tyschenko
Affiliation:
Institute of Semiconductor Physics, 630090 Novosibirsk, Russia
J. Von Borany
Affiliation:
Institut für Ionenstrahlphysik und Materialforschung, Forschungszentrum Rossendorf e. V., D-01314 Dresden, Germany
B. Schmidt
Affiliation:
Institut für Ionenstrahlphysik und Materialforschung, Forschungszentrum Rossendorf e. V., D-01314 Dresden, Germany
R. Grötzschel
Affiliation:
Institut für Ionenstrahlphysik und Materialforschung, Forschungszentrum Rossendorf e. V., D-01314 Dresden, Germany
A. Markwitz
Affiliation:
Institut für Ionenstrahlphysik und Materialforschung, Forschungszentrum Rossendorf e. V., D-01314 Dresden, Germany
R. A. Yankov
Affiliation:
Institut für Ionenstrahlphysik und Materialforschung, Forschungszentrum Rossendorf e. V., D-01314 Dresden, Germany
H. Fröb
Affiliation:
Institutfür Angewandte Photophysik, Technische Universität, D-01062 Dresden, Germany
W. Skorupa
Affiliation:
Institut für Ionenstrahlphysik und Materialforschung, Forschungszentrum Rossendorf e. V., D-01314 Dresden, Germany
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Abstract

Photoluminescence (PL) and electroluminescence (EL) from Si+- and Ge+-implanted SiO2 layers thermally-grown on a Si substrate were studied. The PL spectra were recorded after annealing at temperatures in the range of 400° to 1200°C. Single-peak PL at 460 nm and doublepeak PL at 420 and 385 nm due to Si+-implanted and Ge+-implanted oxide layers, respectively, reached a maximum following heat treatment at 500°C for 30 min. The EL spectra from the Gerich oxides after annealing at 1000°C correlated very well with the PL signal, and showed a linear dependence on the injection current. The EL emission was strong enough to be readily seen with the naked eye, and the EL efficiency was estimated to be about 5×10−4. High-resolution transmission electron microscopy (HRTEM) analysis showed that the formation of nanocrystals in the implanted oxide layers occurred at annealing temperatures in excess of 800°C. The observed light emission is attributable to the presence of-≡Si-Si≡, ≡Si-Ge≡ and ≡Ge-Ge≡ centres in SiO2.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 486: Symposium H – Materials & Devices for Silicon Based Optoelectronics , 1997 , 175
Copyright
Copyright © Materials Research Society 1998

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