Hostname: page-component-848d4c4894-8kt4b Total loading time: 0 Render date: 2024-06-24T19:07:00.675Z Has data issue: false hasContentIssue false
  • English
  • Français

Stroboscopic X-Ray Diffraction Measurements of sub-ns Domain Dynamics in Ferroelectric Films

Published online by Cambridge University Press:  01 February 2011

E. Zolotoyabko ,
J. P. Quintana ,
D. J. Towner  and
B. W. Wessels
E. Zolotoyabko
Affiliation:
Department of Materials Engineering, Technion-Israel Institute of Technology, Haifa 32000, Israel.
J. P. Quintana
Affiliation:
Northwestern University, DND-CAT, APS/ANL Sector 5, Building 432A, 9700 South Cass Ave, Argonne, IL 60439–4857, U.S.A.
D. J. Towner
Affiliation:
Department of Materials Science and Engineering, Northwestern University, Evanston, IL 60208, U.S.A.
B. W. Wessels
Affiliation:
Department of Materials Science and Engineering, Northwestern University, Evanston, IL 60208, U.S.A.
Get access

Abstract

We used the Advanced Photon Source (APS) at Argonne National Laboratory to perform fast (ps range) time-resolved diffraction measurements of the dynamic characteristics in BaTiO3 films subjected to strong high-frequency electric fields. The time-dependent lattice response measured at frequencies between 6.5 MHz and 1.3 GHz revealed damped domain movements with attenuation time rapidly increasing with electric field frequency, v. We found that at frequencies higher than ν ∼ 600 MHz the domain motions in BaTiO3 films become heavily damped, information that may be important to future device operation. A minimum attenuation time, τ ∼ 330 ps, measured at ν = 1.3 GHz was limited by the time constant of the electrical circuit.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 833: Symposium G – Materials, Integration, and Packaging Issues for High-Frequency Devices II , 2004 , G5.2
Copyright
Copyright © Materials Research Society 2005

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Scott, J. F., Ferroelectric Rev. 1, 1 (1998).Google Scholar
[2] Setter, N. and Waser, R., Acta Mater. 48, 151 (2000).Google Scholar
[3] Auciello, O., Scott, J.F. and Ramesh, R., Physics Today 7, 22 (1998).Google Scholar
[4] Gill, D. M., Conrad, C. W., Ford, G., Wessels, B. W., and Ho, S. T., Appl. Phys. Lett. 71, 1783 (1997).Google Scholar
[5] Merz, W. J., Phys. Rev. 95, 690 (1954).Google Scholar
[6] Baniecki, J. D., Laibowitz, R. B., Shaw, T. M., Duncombe, P. R., Neumayer, D. A., Kotecki, D. E., Shen, H., and Ma, Q. Y., Appl. Phys. Lett 72, 498 (1998).Google Scholar
[7] Hoerman, B. H., Nichols, B. M., and Wessels, B. W., Phys. Rev. B 65, 224110 (2002).Google Scholar
[8] Zolotoyabko, E., Quintana, J. P., Hoerman, B. H., and Wessels, B. W., Appl. Phys. Lett. 80, 3159 (2002).Google Scholar
[9] Zolotoyabko, E., Quintana, J. P., Towner, D. J., Hoerman, B. H., and Wessels, B. W.. Ferroelectrics 290, 115 (2003).Google Scholar
[10] Towner, D.J., Ni, J., Marks, T.J. and Wessels, B.W., J. Cryst. Growth 255, 107 (2003).Google Scholar
[11] Truell, R., Elbaum, Ch., and Chick, B. B., Ultrasonic Methods in Solid State Physics, (Academic Press, New York, 1969), p. 263.Google Scholar
[12] Pertsev, N. A. and Arlt, G, J. Appl. Phys. 74, 4105 (1993).Google Scholar
[13] Zgonik, M., Bernasconi, P., Duelli, M., Schlesser, R., Gunter, P., Garrett, M. H., Rytz, D., Zhu, Y., and Wu, X., Phys. Rev. B 50, 5941 (1994).Google Scholar