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Stresses and Adhesion of Thin Polycrystalline 3C SiC Films Grown by CVD on Silicon Substrates
Published online by Cambridge University Press: 22 February 2011
Abstract
SiC thin films less than 1 μm thick are grown by thermal decomposition of CH3SiC13 in a hydrogen atmosphere in an open CVD system. The interface stress is shown to be depend on the growth conditions. The optimal conditions for the preparation of uniform SiC films have been determined. Thermal annealing of the films has also been studied, and the conditions that provide for relaxation of the interface stresses are determined.
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- Copyright © Materials Research Society 1994