Skip to main content Accessibility help
×
Home

Stress-assisted Copper-induced Lateral Growth of Polycrystalline Germanium

  • B. Hekmatshoar (a1), D. Shahrjerdi (a1), S. Mohajerzadeh (a1), A. Khakifirooz (a2), M. Robertson (a3) and A. Afzali-Kusha (a1)...

Abstract

Lateral growth of poly-Ge at temperatures as low as 150°C is reported. External mechanical stress has been properly manipulated to drive the low temperature Cu-induced crystallization of poly-Ge wherever Cu is deposited to form the crystallization seed for lateral growth. Uniaxial compressive stress has been externally applied to the Ge layer by bending the flexible PET substrate inward. A 10-hour period thermo-mechanical post-treatment in the presence of 0.05% equivalent compressive strain leads to a growth rate of 2.5 μm/hour in the direction of the applied stress and 1.8 μm/hour in the perpendicular direction, as confirmed by SEM analysis. We believe that partial growth of the Cu-seeded poly-Ge region in the form of tetragonal structures is the key feature which leads to the lateral growth of the pure-Ge strip. Elimination of the compressive stress hinders the lateral growth completely, even at reasonably high temperatures.

Copyright

References

Hide All
[1] Teschler, L., Machine Design, 74, 59 (2002)
[2] Jurichich, S., Wood, S. C. and Saraswat, K. C., IEEE Trans. Semiconductor Manufacturing, 9, 562 (1996)
[3] Missana, T., Ofonso, C. N., Petford-Long, A. K., and Doole, R. C., Appl. Phys. Lett. 69, 2039 (1996)
[4] Konno, T. J. and Sinclair, R., Mater. Sci. Eng., A 179, 426 (1994)
[5] Konvács, I., Harmat, P., Sulyok, A., and Radnoczi, G., Thin Solid Films 317, 34 (1998)
[6] Katsuki, F., Hanafusa, K., and Yonemora, M., J. Appl. Phys. 89, 4643 (2001)
[7] Doyle, J. P., Svensson, B. G., and Johanson, S., Appl. Phys. Lett. 67, 2804 (1995)
[8] Khakifirooz, A., Mohajerzadeh, S. S., Haji, S., and Asl, E. Soleimani, Proc. MRS Spring Meeting, 618, 255 (2001).
[9] Hekmatshoar, B., Shahrjerdi, D., Mohajerzadeh, S., Khakifirooz, A., Goodarzi, a. and Robertson, M., J. Vac. Sci. Technol, A 21, 752 (2003)
[10] Hekmatshoar, B., Shahrjerdi, D., Mohajerzadeh, S., Khakifirooz, A., Akhavan, A. and Robertson, M., Proc. MRS Spring Meeting, 769, H6.11 (2003)
[11] Shahrjerdi, D., Hekmatshoar, B., Mohajerzadeh, S. and Khakifirooz, A., Proc. IEEE 61th Device Research Conference, 85 (2003)
[12] Lee, S. W. and Joo, S. K., IEEE Electron Device Lett., 17, 160 (1996)
[13] Bhat, G. A., Jin, Z., Kwok, H. S., and Wong, M., IEEE Electron Device Lett., 20, 167 (1999)
[14] Sato, S., Nozaki, S., and Morisaki, H. and Iwase, M., Appl. Phys. Lett., 66, 3176 (1995)
[15] Xu, J.L., Chen, J.L., Feng, J.Y., Nuclear Instruments and Methods in Physics Research, B 194, 297 (2002)

Stress-assisted Copper-induced Lateral Growth of Polycrystalline Germanium

  • B. Hekmatshoar (a1), D. Shahrjerdi (a1), S. Mohajerzadeh (a1), A. Khakifirooz (a2), M. Robertson (a3) and A. Afzali-Kusha (a1)...

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed