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Stress Orientation Dependence of Dislocation Glide in Epitaxial Films

Published online by Cambridge University Press:  25 February 2011

S. Dakshinamurthy  and
K. Rajan
S. Dakshinamurthy
Affiliation:
Department of Materials Engineering, Rensselaer Polytechnic Institute, Troy NY 12180.
K. Rajan
Affiliation:
Department of Materials Engineering, Rensselaer Polytechnic Institute, Troy NY 12180.
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Abstract

The effect of different stresses on the glide of the commonly observed dislocations in epitaxial films is systematically investigated. The possibility of planar dissociation of perfect dislocations and the conditions for their subsequent glide are explored.

Slip transfer from one plane to another is affected by the crystal orientation relative to the stress axis. This process is quantitatively analyzed by calculating iso-Schmid factors on a stereographic projection. The results of this model are correlated with those found in the literature.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 202: Symposium C – Evolution of Thin Film and Surface Microstructure , 1990 , 597
Copyright
Copyright © Materials Research Society 1991

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References

REFERENCES

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