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Stress Compensation Techniques in Thin Layers Applied to Silicon Micromachining

Published online by Cambridge University Press:  22 February 2011

W. Lang ,
G. Mük ,
E. Rose ,
J. Bausells ,
K. Kühl ,
N. Moldovan  and
J. Suski
W. Lang
Affiliation:
Fraunhofer Institute for Solid State Technology, Munich
G. Mük
Affiliation:
MBB GmbH, Munich, Germany
E. Rose
Affiliation:
MBB GmbH, Munich, Germany
J. Bausells
Affiliation:
Centro Nacional de Microelectronica, Barcelona, Spain
K. Kühl
Affiliation:
Fraunhofer Institute for Solid State Technology, Munich
N. Moldovan
Affiliation:
Fraunhofer Institute for Solid State Technology, Munich
J. Suski
Affiliation:
Schlumberger Industries / SMR, Montrouge, France
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Abstract

Stress in thin films is one of the mayor technological problems of silicon micromachining. Therefore stress reduction by a compensation method increases the technological use of a material. Three methods to obtain stress free films are investigated:

1. Stress in SiO2 and Si3N4 can be compensated by ion implantation.

2. Sandwich layers of SiO2 and Si3N4 can be made internally stress compensated by variation of the thickness ratio.

3. Polysilicon is stress reduced by appropriate doping and annealing.

The film stress is evaluated by the measurement of the bending of the substrate. Examples of processed membranes, bridges and cantilevers made of stress compensated films are given.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 284: Symposium G – Amorphous Insulating Thin Films , 1992 , 119
Copyright
Copyright © Materials Research Society 1993

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References

REFERENCES

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