Skip to main content Accessibility help
×
Home

Stress Compensation Techniques in Thin Layers Applied to Silicon Micromachining

  • W. Lang (a1), G. Mük (a2), E. Rose (a2), J. Bausells (a3), K. Kühl (a1), N. Moldovan (a1) and J. Suski (a4)...

Abstract

Stress in thin films is one of the mayor technological problems of silicon micromachining. Therefore stress reduction by a compensation method increases the technological use of a material. Three methods to obtain stress free films are investigated:

1. Stress in SiO2 and Si3N4 can be compensated by ion implantation.

2. Sandwich layers of SiO2 and Si3N4 can be made internally stress compensated by variation of the thickness ratio.

3. Polysilicon is stress reduced by appropriate doping and annealing.

The film stress is evaluated by the measurement of the bending of the substrate. Examples of processed membranes, bridges and cantilevers made of stress compensated films are given.

Copyright

References

Hide All
1. Mack, L.M., Reismann, A. and Bhattacharya, P.K., J. Electochem. Soc, Vol. 136, No. 11, p. 3433 (1989)
2. EerNisse, E.P., Stress in ion-implanted CVD Si3N4 films, J. Appl. Phys. Vol 48, No 8, Aug 1977
3. Guckel, H., Burns, D.W., Visser, C.C.G., Tilmans, H.A.C. and Deroo, D., IEEE Trans. Electron Devices ED-35 (1988) pp. 800801
4. Fan, L.S. and MuUer, R.S., IEEE Solid-State Sensor and Actuator Workshop, Hilton Head, SC (1988) pp. 5558
5. Guckel, H., Randazzo, T. and Burns, D.W., J. Appl. Phys. 57 (1985) pp. 16711675.

Stress Compensation Techniques in Thin Layers Applied to Silicon Micromachining

  • W. Lang (a1), G. Mük (a2), E. Rose (a2), J. Bausells (a3), K. Kühl (a1), N. Moldovan (a1) and J. Suski (a4)...

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed