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Stress and Strain Measurements in Semiconductor Device Channel Areas by Convergent Beam Electron Diffraction

  • Jinghong Li (a1), Anthony Domenicucci (a2), Dureseti Chidambarrao (a3), Brian Greene (a4), Nivo Rovdedo (a5), Judson Holt (a6), Drerren Dunn (a7) and Hung Ng (a8)...

Abstract

Convergent electron beam diffraction (CBED) has been successfully applied to measure strain/stress in the channel area in PMOS semiconductor device with embedded SiGe (eSiGe) for 65nm technology. Reliable results of strain/stress measurements in the channel area have been achieved by good fitting of experimental CBED patterns with theoretical calculations. Stress measurements from CBED are in good agreement with simulations. A compressive stress as high as 823.9 MPa was measured in the <110> direction in the channel area of a PMOS device with eSiGe with 15% Ge and a thickness of 80nm. Stress measurements from CBED also confirm that the depth of the eSiGe and defects such as dislocation loops within the eSiGe relax strain/stress within the film and reduce strain/stress in the channel area.

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1 Ghani, T., Armstrong, M., Auth, C., Bost, M., Charvat, P., Glass, G., Hoffmann, T., Thompson, K., Bohr, M. et, al., IEDM Technical Digest 2003, p978980
2 Chidambaram, P. R., Smith, B., Hall, L., Kim, Y., Jones, P., Irwin, R., Rotondaro, A., Grider, D. T., et al., 2004 Symp. on VLSI Tech. Diges. of Tech Paper, p48
3 Thompson, S. E., Sun, G., Wu, K., Lim, J. and Nishida, T., Technical Digest, IEDM (2004), p221224
4 Lou, Z., Chong, Y., Kim, J., Rovedo, N., Chidambarrao, D., Li, J., Davis, R., Schepis, D., Ng, H., Rim, K. et, al., IEDM Technical Digest (2005), p495498
5 Zuo, J. M., Ultramicroscopy, 41 (1992), p211
6 Armigliato, A., Balboni, R., Benedetti, A., Carnevale, G. P., Cullis, A. G., Frabboni, S. and Piccolo, D., Solid State Phenomena, Vol. 82–84 (2002), p727734
7 Toda, A., Ikarashi, N., and Ono, H., Appl. Phys. Lett., 79 (2001), p 4243
8 Clement, L., Pantel, R., Kwakman, L. F. Tz., Rouviere, J. L., Appl. Phys. Lett., 85 (2004), p651
9 Wolf, I. D., Senez, V., Balboni, R., Armigliato, A., Frabboni, S., Cedola, A., Lagomarsino, S., Microelectronic Engineering, 70 (2003), 425435
10 Benedetti, A., Gullis, A. G., Armigliato, A., Balboni, R., Frabboni, S., Mastracchio, G. F., Pavia, G., Appl. Surf. Sci., 188(2002), p214
11 Balboni, R., Frabboni, S. and Armigliato, A., Phil. Mag., A, Vol 77(1998), p67

Keywords

Stress and Strain Measurements in Semiconductor Device Channel Areas by Convergent Beam Electron Diffraction

  • Jinghong Li (a1), Anthony Domenicucci (a2), Dureseti Chidambarrao (a3), Brian Greene (a4), Nivo Rovdedo (a5), Judson Holt (a6), Drerren Dunn (a7) and Hung Ng (a8)...

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