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Stress Analysis of Titanium Dioxide Films by Raman Scattering and X-Ray Diffraction Methods

Published online by Cambridge University Press:  15 February 2011

Li-Jian Meng  and
M. P. dos Santos
Li-Jian Meng
Affiliation:
Departamento de Física, Instituto Superior de Engenharia do Porto, Rua de São Tomé, 4200 Porto, Portugal, ljmeng@ci.uminho.pt
M. P. dos Santos
Affiliation:
Departamento de Física, Universidade do Minho, 4710 Braga, Portugal
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Abstract

Titanium dioxide films have been deposited onto glass substrates by dc reactive magnetron sputtering at different sputtering pressures (2×10−3 -- 2×10−2 mbar). The films have been characterized by measuring their Raman scattering and X-ray diffraction (XRD). The films stress have been calculated by analyzing their Raman spectra and X-ray diffraction spectra. Two methods give similar results which films prepared at low sputtering pressure have high stress values.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 436: Symposium CC – Thin Films Stresses and Mechanical Properties VI , 1996 , 523
Copyright
Copyright © Materials Research Society 1997

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