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Strained-Si-on-Insulator (SSOI) and SiGe-on-Insulator (SGOI): Fabrication Obstacles and Solutions

Published online by Cambridge University Press:  11 February 2011

Gianni Taraschi ,
Arthur J. Pitera ,
Lisa M. McGill ,
Zhi-Yuan Cheng ,
Minjoo L. Lee ,
Thomas A. Langdo  and
Eugene A. Fitzgerald
Gianni Taraschi
Affiliation:
Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139
Arthur J. Pitera
Affiliation:
Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139
Lisa M. McGill
Affiliation:
Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139
Zhi-Yuan Cheng
Affiliation:
Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139
Minjoo L. Lee
Affiliation:
Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139
Thomas A. Langdo
Affiliation:
Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139
Eugene A. Fitzgerald
Affiliation:
Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139
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Abstract

Advanced CMOS substrates composed of ultra-thin strained-Si and SiGe-on-insulator were fabricated, combining both the benefits of high-mobility strained-Si and SOI. Our pioneering method employed wafer bonding of SiGe virtual substrates (with strained-Si layers) to oxidized handle wafers. Layer transfer onto insulating handle wafers can be accomplished using grind-etchback or delamination via implantation. Both methods were found to produce a rough transferred layer, but polishing is unacceptable due to non-uniform material removal across the wafer and the lack of precise control over the final layer thickness. To solve these problems, a strained-Si stop layer was incorporated into the bonding structure. After layer transfer, excess SiGe was removed using a selective etch process, stopping on the strained-Si. Within the context of ultra-thin SSOI and SGOI fabrication, this paper describes recent improvements including metastable stop layers, low temperature wafer bonding, and improved selective SiGe removal.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 745: Symposium N – Novel Materials and Processes for Advanced CMOS , 2002 , N4.7
Copyright
Copyright © Materials Research Society 2003

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References

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