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Strained Quantum Dots in Porous Silicon

  • Xue-Shu Zhao (a1), Peter D. Persans (a1), John Schroeder (a1) and Yeun-Jung Wu (a1)

Abstract

On the basis of Raman, photoluminescence, and absorption studies of porous and nanoparticle silicon we propose that the strong luminescence in porous silicon results from strained silicon quantum dots. A silicon nanoparticle is a special Jahn-Teller system induced by extended electron states rather than localized state. Thus Raman scattering and photoluminescence in porous silicon are multi-phonon assisted free electronic transition processes, all observed anomalous properties of porous silicon can be clearly explained by using this strained quantum dot model.

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Strained Quantum Dots in Porous Silicon

  • Xue-Shu Zhao (a1), Peter D. Persans (a1), John Schroeder (a1) and Yeun-Jung Wu (a1)

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