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Strain Relief and Defect Formation in High Dose Oxygen Implanted Silicon

Published online by Cambridge University Press:  28 February 2011

D. Venables ,
K. S. Jones ,
F. Namavar  and
J. M. Manke
D. Venables
Affiliation:
Department of Materials Science and Eng., University of Florida, Gainesville, FL 32611
K. S. Jones
Affiliation:
Department of Materials Science and Eng., University of Florida, Gainesville, FL 32611
F. Namavar
Affiliation:
SPIRE Corporation, Patriots Park, Bedford, MA 01730
J. M. Manke
Affiliation:
SPIRE Corporation, Patriots Park, Bedford, MA 01730
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Abstract

Lattice strain and defect formation in oxygen implanted silicon (SIMOX) were investigated as a function of dose and annealing conditions by high resolution x-ray diffraction and transmission electron microscopy. X-ray rocking curves revealed the presence of two distinct strained layers. Self-interstitial clusters and oxygen interstitials gave rise to a buried strain layer in unidirectional tension centered around the projected range at low doses (l×1016 and 3×1016 cm−2. As the dose was increased to 1×1017 and 3×1017 cm−2 a supersaturation of vacancies near the surface produced a second strain layer with a unidirectional lattice contraction at the wafer surface. Annealing at 900°C, 0.5 hr. reduced this surface strain as the defects coarsened into observable cavities. The development of cavities upon annealing was used in a sequential implantation and low temperature annealing process to produce low threading dislocation density SIMOX. Possible mechanisms for threading dislocation formation are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 235: Symposium A – Phase Formation and Modification by Beam-Solid Interactions , 1991 , 103
Copyright
Copyright © Materials Research Society 1992

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References

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