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Strain Relaxation of He+ Implanted, Pseudomorphic Si1−xGex Layers on Si(100)

  • B. Holländer (a1), S. Mantl (a1), St. Lenk (a1), H. Trinkaus (a2), D. Kirch (a3), M. Luysberg (a3), Th. Hackbarth (a3), H.-J. Herzog (a3) and P.F.P. Fichtner (a4)...


Strain relaxed Si1−xGex buffer layers are of great importance as virtual substrates for Si1−xGex/Si quantum well structures and devices. We apply He+ ion implantation and subsequent annealing on pseudomorphic, MBE-grown Si1−xGex/Si(100) heterostructures with an implantation depth of about 100 nm below the Si1−xGex/Si interface. A narrow defect band is generated inducing the formation of strain relieving misfit dislocations during subsequent thermal annealing. Efficient strain relaxation was demonstrated for Si1−xGex layers with Ge fractions up to 30 at. %. The variation of the implantation dose and the annealing conditions changes the dislocation configuration and the He bubble structure. At a dose of 2×1016 cm−2 a high degree of relaxation is accompanied by a low density of threading dislocations of about 107 cm−2 for a Ge content of 30%. An additional increase of the Ge content can be achieved by annealing in oxygen. The oxidation of Si1−xGex leads to the formation of SiO2 while the Ge atoms are rejected from the oxide leading to a pile-up of Ge below the oxidation front. The heterostructures were analyzed using X-ray diffraction, Rutherford backscattering/channeling spectrometry and transmission electron microscopy.



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1. Schäffler, F., Semicond. Sci. Technol. 12 (1997) 1515
2. Ismail, K., Arafa, M., Saenger, K.L., Chu, J. O., and Meyerson, B.S., Appl. Phys. Lett. 66,1077 (1995)
3. Höck, G., Glück, M., Hackbarth, T., Herzog, H.-J., and Kohn, E., Thin Solid Films 336, 141 (1998)
4. Zeuner, M., Hackbarth, T., König, U., Gruhle, A., and Aniel, F., 57th Annual Dev. Res. Conf. Digest, Univ. of California, Santa Barbara, USA, IEEE 99TH 177, 8393 (1999)
5. Schäffler, F., Többen, D., Herzog, H.-J., Abstreiter, G., and Holländer, B., Semicond. Sci. Technol. 7, 260 (1992)
6. Fitzgerald, E.A., Xie, Y.H., Green, M.L., Brasen, D., Kortan, A.R., Michel, J., Mii, Y.J., and Weir, B.E., Appl. Phys. Lett. 59, 811 (1991)
7. Holländer, B., Mantl, S., Michelsen, W., Mesters, St., Hartmann, A., Vescan, L., Gerthsen, D., Nucl. Instr. Meth. B84, 218 (1994)
8. Powell, A.R., Iyer, S.S., and LeGoues, F.K., Appl. Phys. Lett. 64, 1856 (1994)
9. Linder, K.K., Zhang, F.C., Rieh, J.-S., Bhattacharya, P., and Houghton, D., Appl. Phys. Lett. 70, 3224 (1997)
10. Bauer, M., Lyutovich, K., Oehme, M., Kasper, E., Herzog, H.-J., and Ernst, F., Thin Sol. Films 369, 152 (2000)
11. Trinkaus, H., Holländer, B., SRongen, t., Mantl, S., Herzog, H.-J., Kuchenbecker, J., Hackbarth, T., Appl. Phys. Lett. 76, 3552 (2000)
12. Holländer, B., Lenk, St., Mantl, S., Trinkaus, H., Kirch, D., Luysberg, M., Hackbarth, T., Herzog, H.-J., Fichtner, P.F.P., Nucl. Instr. Meth. B175–177, 357 (2001)
13. Picraux, S.T., Chu, W.K., Allen, W.R., Ellison, J.A., Nucl. Instr. Meth. B15, 306 (1986)
14. Holländer, B., Mantl, S., Stritzker, B., Schäffler, F., Herzog, H.-J., Kasper, E., Appl. Surf. Sci. 50, 450 (1991)
15. Hackbarth, T., Herzog, H.-J., Zeuner, M., Höck, G., Fitzgerald, E. A., Bulsara, M., Rosenblad, C., Känel, H. von, Thin Solid Films 369, 148 (2000)
16. Tezuka, T., Sugiyama, N., Mizuno, T., Suzuki, M., and Takagi, S., Jpn. J. Appl. Phys. 40, 2866 (2001)

Strain Relaxation of He+ Implanted, Pseudomorphic Si1−xGex Layers on Si(100)

  • B. Holländer (a1), S. Mantl (a1), St. Lenk (a1), H. Trinkaus (a2), D. Kirch (a3), M. Luysberg (a3), Th. Hackbarth (a3), H.-J. Herzog (a3) and P.F.P. Fichtner (a4)...


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