Hostname: page-component-8448b6f56d-mp689 Total loading time: 0 Render date: 2024-04-23T13:52:24.907Z Has data issue: false hasContentIssue false
  • English
  • Français

STRAIN MEASUREMENT IN EPITAXIAL NiSi2/Si(lll) BY MeV ION CHANNELING

Published online by Cambridge University Press:  28 February 2011

MASAKO OKAMOTO ,
SHIN HASHIMOTO ,
B.D. HUNT ,
L.J. SCHOWALTER  and
W.M. GIBSON
MASAKO OKAMOTO
Affiliation:
Physics Department, State University of New York at Albany, NY 12222.
SHIN HASHIMOTO
Affiliation:
Physics Department, State University of New York at Albany, NY 12222.
B.D. HUNT
Affiliation:
General Electric Corporate Research and Development, Schenectady, NY 12301.
L.J. SCHOWALTER
Affiliation:
Physics Department, State University of New York at Albany, NY 12222.
W.M. GIBSON
Affiliation:
Physics Department, State University of New York at Albany, NY 12222.
Get access

Abstract

Strains in both type-A and type-B NiSi2 epitaxial films grown on Si(lll) substrates were measured by means of MeV 4He+ ion channeling. The results show the critical thickness to maintain pseudomorphic growth strongly depends on theepitaxial orientation of the NiSi2 film. The difference in critical thicknesses between type-A and type-B NiSi2 can be explained by considering the different type of misfit dislocations introduced at the interface. Namely, at the type-B interface, 1/<112> partial dislocations associated with interface steps are allowed while they are prohibited at the type-A interface. Dislocation densities measured by TEM also support these results.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 56: Symposium H – Layered Structures and Epitaxy , 1985 , 157
Copyright
Copyright © Materials Research Society 1986

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Saito, S., Ishiwara, H. and Furukawa, S., Japan J. Appl. Phys. 20, 49 (1981).CrossRefGoogle Scholar
2. Geppert, D.V., Proc. IRE 50, 1527 (1962).Google Scholar
3.E.J. van Loenen, Fischer, A.E.M.J. and J.F. van der Veen, Surf. Sci. 154, 52 (1985).Google Scholar
4. Bean, J.C., Feldman, L.C., Fiory, A.T. and Lynch, R.T., Appl. Phys. Lett. 44, 102 (1984).CrossRefGoogle Scholar
5. Maree, P.M.J., R.I.J. Olthof, Frenken, J.W.M., J.F. van der Veen, Bulle-Lieuwma, C.W.T., M.P.A. Viegers and Zalm, P.C., J. Appl. Phys. 58, 3097 (1985).CrossRefGoogle Scholar
6. Tung, R.T., Gibson, J.M. and Poate, J.M., Phys. Rev. Lett. 50, 429 (1983).CrossRefGoogle Scholar
7. Gibson, J.M., Tung, R.T., Phillips, J.M. and Poate, J.M., Mat. Res. Soc. Symp. Proc. 25, 405 (1984)CrossRefGoogle Scholar
8. Hamm, R.A., Vandenberg, J.M., Gibson, J.M. and Tung, R.T., Mat. Res. Soc. Symp. Proc. 37, 367, (1985).CrossRefGoogle Scholar
9. Hunt, B.D., Schowalter, L.J., Lewis, N., Hall, E.L., Hauenstein, R.J., Schlesinger, R.E., McGill, T.C., Okamoto, M. and Hashimoto, S., to be published in Mat. Res. Soc. Symp. Proc., (Dec. 2-7, Boston, 1985)Google Scholar
10. Hashimoto, S., Feng, Y.-Q., Gibson, W.M., Schowalter, L.J. and Hunt, B.D., to be published, Nucl. Instr. and Method, (Proc. 11th Int. Conf. Atomic Collisions in Solids, Washington D.C., 1985)Google Scholar
11. Kayed, M.A., Huang, K.-G., Zegenhagen, J., Gibson, W.M., Phillips, J.C., Schowalter, L.J. and Hunt, B.D., to be presented at APS meeting. (March 1986)Google Scholar
12. Hashimoto, S., Peng, J.-L., Gibson, W.M., Schowalter, L.J. and Fathauer, R.W., Appl. Phys. Lett. 47, 1071 (1985).CrossRefGoogle Scholar