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Strain mapping on gold thin film buckling and silicon blistering

  • P. Goudeau (a1), N. Tamura (a2), G. Parry (a1), J. Colin (a1), C. Coupeau (a1), F. Cleymand (a3) and H. Padmore (a2)...

Abstract

Stress/Strain fields associated with thin film buckling induced by compressive stresses or blistering due to the presence of gas bubbles underneath single crystal surfaces are difficult to measure owing to the microscale dimensions of these structures. In this work, we show that micro Scanning X-ray diffraction is a well suited technique for mapping the strain/stress tensor of these damaged structures.

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1. Coupeau, C., Goudeau, P., Belliard, L., George, M., Tamura, N., Cleymand, F., Colin, J., Perrin, B. and Grilhé, J., Thin Solid Films 469-470, 221 (2004).
2. Coupeau, C., Cleymand, F. and Grilhé, J., Scripta mater. 43, 187 (2000).
3. Huang, L.-J., Tong, Q.-Y., Lee, T.-H., Chao, Y.-L. and Gosele, U. M., Electrochemical Society proceedings 19, 1373 (1998).
4. Goudeau, P., Villain, P., Tamura, N., Padmore, H., Applied Physics Letters 83, 51 (2003).
5. Tamura, N., MacDowell, A. A., Spolenak, R., Valek, B. C., Bravman, J. C., Brown, W. L., Celestre, R. S., Padmore, H. A., Batterman, B.W. and Patel, J. R., J. Synchrotron Rad. 10, 137 (2003).

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