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Strain in Epitaxial GaAs on CaF2/Si(111)

Published online by Cambridge University Press:  28 February 2011

L.J. Schowalter ,
J.E. Ayers ,
S.K. Ghandhi ,
Shin Hashimoto ,
W.M. Gibson ,
F.K. LeGoues  and
P.A. Claxton
L.J. Schowalter
Affiliation:
Physics Dept. and Ctr. for Integrated Electronics, Rensselaer Polytechnic Institute, Troy, NY 12180
J.E. Ayers
Affiliation:
Electrical, Computer and Systems Engineering Dept., Rensselaer Polytechnic Institute Troy, NY 12180
S.K. Ghandhi
Affiliation:
Electrical, Computer and Systems Engineering Dept., Rensselaer Polytechnic Institute Troy, NY 12180
Shin Hashimoto
Affiliation:
Physics Department, State University of New York, Albany, NY 12222
W.M. Gibson
Affiliation:
Physics Department, State University of New York, Albany, NY 12222
F.K. LeGoues
Affiliation:
IBM T.J. Watson Research Ctr., Yorktown Heights, NY 10598
P.A. Claxton
Affiliation:
Dept. of Electronic and Electrical Eng., U. Sheffield, Sheffield, United Kingdom
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Abstract

Epitaxial layers of (111) GaAs of approximately 1 µm thickness were grown on epitaxial CaF2 buffer layers which were either 140 or 380 nm thick on Si(111) substrates. The best nucleation temperature for the GaAs on CaF2/Si(111) we have observed was 620 °C. This resulted in high quality GaAs films which exhibited channeling minimum yields of 4%. The density of threading dislocations in the GaAs layers was observed by TEM to be ~108 cm-2. Double-crystal x-ray diffraction measurements showed that the strain (ε┴.) was less than 2.2×10-4 in both sets of GaAs samples. Ion channeling, however, revealed a large tetragonal strain of 3.5×10-3 (ε┴ = 1.7×10-3) in the thinner (140 nm) CaF2 buffer layers. By doing ion channeling with high energy (2.5 MeV) protons, it was possible to determine strain more accurately. Using this technique, we were able to set an upper limit for the tetragonal strain of 2.5×10-4 in both the GaAs (which implies ε┴ < 8×10-5 and CaF2 (ε┴ < 1.5×10-4) layers for the thicker (380 nm) CaF2 buffer layer structure. These results are in good agreement with the strain predicted from previous strain measurements of CaF2 epitaxial layers on Si.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 160 , 1989 , 527
Copyright
Copyright © Materials Research Society 1990

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