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Strain Effects in Superlattices of Diluted Magnetic Semiconductor ZnTe/Zn1-xMnxTe

  • Chenjia Chen (a1), Xi Chen (a1), Xiaoli Li (a1), Haitiao Li (a1), Xuezhong Wang (a1), Zhen Ling (a2), Jie Wang (a2) and Xun Wang (a2)...


ZnTe/Zn1-xMnxTe superlattices were grown on GaAs (001) substrates by molecular beam epitaxy. The multi-phonon processes including overtones and combinations of optical phonons have been studied by near resonant Raman scattering in the temperature range 13 K to 300 K. The strain arising from lattice mismatch gives rise to a shift in the optical-phonon frequencies. A two-phonon interface mode of superlattice has been observed and identified for the first time. Strain-induced red shifts of exciton energies related to transitions from the conduction subband to the light-hole and heavy-hole subband have been found by photoreflectance measurements. Experimental results agree well with the calculated strain-induced shift in superlattices.



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