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Strain and Grain Size Effects on Epitaxial PZT Thin Films

Published online by Cambridge University Press:  01 February 2011

Oscar Blanco
Affiliation:
Centro de Investigación en Materiales, DIP-CUCEI, Univ. de Guadalajara Apdo. Postal 2-638, CP. 44281, Guadalajara, Jal., México
Jesus Heiras
Affiliation:
Centro de Ciencias de la Materia Condensada, UNAM Apdo. Postal 2681, C.P. 22800, Ensenada, B.C., México
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Abstract

Epitaxial ferroelectric thin films of lead zirconium-titanium oxide, Pb(Zr0.53Ti0.47)O3 (PZT), were successfully grown on SrTiO3, LaAlO3, and Sr(Nb)TiO3 single crystal substrates by a modified RF sputtering technique at high oxygen pressures. The structural properties of the films were evaluated by θ/2θ, ω and ø scans. From these data the crystalline orientation relationships may be extracted. For films grown on SrTiO3 and Sr(Nb)TiO3 substrates, the following orientation relationships were determined: PZT [001] parallel to [001] of the substrate, and PZT [100] parallel to [100] of the substrate. Films grown on LaAlO3 substrates showed a bi-domain crystalline structure with orientation relationships as follows: PZT [100] parallel to [001] of the substrate and PZT [001] parallel to [001] of the substrate. This work was focused to the determination the strain and grain size coefficients, and the analysis of their contribution on the peak broadening in the XRD patterns, and in considering their effects over the ferroelectric behavior. From Williamson-Hall plots, it was possible to conclude that the enhancement of the crystalline film properties (epitaxy and single crystalline domains) reduce the short range strains contribution to peak broadening. On other hand, the grain size contribution to peak broadening was increased with the enhancement of the film cristallinity.

Type
Research Article
Copyright
Copyright © Materials Research Society 2005

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