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Step-Controlled Epitaxial Growth of SiC

Published online by Cambridge University Press:  26 February 2011

Hiroyuki Matsunani ,
Tetsuzo Ueda  and
Hironori Nishino
Hiroyuki Matsunani
Affiliation:
Department of Electrical Engineering, Kyoto University Yoshidahonmachi, Sakyo, Kyoto 606, Japan
Tetsuzo Ueda
Affiliation:
Department of Electrical Engineering, Kyoto University Yoshidahonmachi, Sakyo, Kyoto 606, Japan
Hironori Nishino
Affiliation:
Department of Electrical Engineering, Kyoto University Yoshidahonmachi, Sakyo, Kyoto 606, Japan
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Abstract

Vapor phase epitaxial(VPE) growth of SIC on 6H-SiC substrates has been carried out at 1500°C or below. On well-oriented (0001)Si faces, twin crystalline 3C-SiC with double positioning boundaries was grown, whereas on off-oriented (0001)Si faces, single crystalline 6H-SiC was grown with a very smooth surface. This temperature is more than 300°C lower in comparison with that for 6H-SiC VPE growth reported previously. By the introduction of offorientation, the density of surface steps is increased. Crystal growth occurs through lateral growth from the steps. The surface morphology of grown layers on off-oriented substrates, however, varied with the offdirection and the polarity of substrates. Grown layers are characterized by etch-pits observation, photoluminescence(PL) measurements and reflection high energy electron diffraction. On the basis of these experimental results, the growth mechanism on (0001)Si and (0001)C faces of 6H-SiC is discussed. P-type doping is tried, and electrical and PL properties are examined. Pn junction fabrication is also studied.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 162: Symposium F – Diamond, Silicon Carbide and Related Wide Bandgap Semiconductors , 1989 , 397
Copyright
Copyright © Materials Research Society 1990

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References

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