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Step Profile Fluctuations in Quantum-Well Wire Growth on Vicinal Surfaces

Published online by Cambridge University Press:  28 February 2011

K.J. Hugill ,
T. Shitara ,
S. Clarke ,
D.D. Vvedensky  and
B.A. Joyce
K.J. Hugill
Affiliation:
Semiconductor Materials IRC, Imperial College, London SW7 2BZ, United Kingdom The Blackett Laboratory, Imperial College, London SW7 2BZ, United Kingdom
T. Shitara
Affiliation:
Semiconductor Materials IRC, Imperial College, London SW7 2BZ, United Kingdom The Blackett Laboratory, Imperial College, London SW7 2BZ, United Kingdom
S. Clarke
Affiliation:
Semiconductor Materials IRC, Imperial College, London SW7 2BZ, United Kingdom The Blackett Laboratory, Imperial College, London SW7 2BZ, United Kingdom
D.D. Vvedensky
Affiliation:
Semiconductor Materials IRC, Imperial College, London SW7 2BZ, United Kingdom The Blackett Laboratory, Imperial College, London SW7 2BZ, United Kingdom
B.A. Joyce
Affiliation:
Semiconductor Materials IRC, Imperial College, London SW7 2BZ, United Kingdom
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Abstract

Molecular-beam epitaxy of quantum-well wires on vicinal surfaces is studied by application of Monte Carlo simulations of a solid-on-solid model. Characterization of simulated quantum-well wires indicates an optimum regime within which the quality of the quantum-well wire is maximized. The model is extended to include observed anisotropies in GaAs growth on vicinal surfaces, and the conclusion is reached that better quality quantum-well wires may be grown on substrates misoriented from the (001) towards [110], rather than [110], due to relative step edge stability on the two misoriented surfaces.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 160 , 1989 , 405
Copyright
Copyright © Materials Research Society 1990

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