Hostname: page-component-848d4c4894-tn8tq Total loading time: 0 Render date: 2024-06-30T18:09:09.197Z Has data issue: false hasContentIssue false
  • English
  • Français

Step Coverage and Composition of Pb(Zr, Ti)O3 Capacitors Prepared on Sub-Micron Three-Dimensional Trench Structure by Metalorganic Chemical Vapor Deposition

Published online by Cambridge University Press:  01 February 2011

Atsushi Nagai ,
Gouji Asano ,
Jun Minamidate ,
Chel Jong Choi ,
Choong-Rae Cho ,
Youngsoo Park  and
Hiroshi Funakubo
Atsushi Nagai
Affiliation:
Department of Innovative and Engineered Materials, Tokyo Institute of Technology G1–32, 4259 Nagatsuta-cho, Midori-ku, Yokohama 226–8502, JAPAN
Gouji Asano
Affiliation:
Department of Innovative and Engineered Materials, Tokyo Institute of Technology G1–32, 4259 Nagatsuta-cho, Midori-ku, Yokohama 226–8502, JAPAN
Jun Minamidate
Affiliation:
Department of Innovative and Engineered Materials, Tokyo Institute of Technology G1–32, 4259 Nagatsuta-cho, Midori-ku, Yokohama 226–8502, JAPAN
Chel Jong Choi
Affiliation:
Samsung Advanced Institute of Technology Mt. 14–1, Nongseo-Ri, Giheung-Eup, Yongin-Si, Gyeonggi-Do 449–712, KOREA
Choong-Rae Cho
Affiliation:
Samsung Advanced Institute of Technology Mt. 14–1, Nongseo-Ri, Giheung-Eup, Yongin-Si, Gyeonggi-Do 449–712, KOREA
Youngsoo Park
Affiliation:
Samsung Advanced Institute of Technology Mt. 14–1, Nongseo-Ri, Giheung-Eup, Yongin-Si, Gyeonggi-Do 449–712, KOREA
Hiroshi Funakubo
Affiliation:
Department of Innovative and Engineered Materials, Tokyo Institute of Technology G1–32, 4259 Nagatsuta-cho, Midori-ku, Yokohama 226–8502, JAPAN
Get access

Abstract

Pb(Zr, Ti)O3 (PZT) films were deposited into sub-micron trench structure consisting of SiO2/TiAlN/Ti/SiO2/Si to investigate their thickness and composition conformality by pulsed-metalorganic chemical vapor deposition (MOCVD) using liquid delivery source-supply system. Bis(dipivaloylmethanato)lead [Pb(DPM)2], tetrakis(1-methoxy-2-methyl-2-propoxy)zirconium [Zr(MMP)4] and tetrakis(1-methoxy-2-methyl-2-propoxy)titanium [Ti(MMP)4] were used as Pb, Zr and Ti source materials, respectively. In Arrhenius plot, the slopes of the straight lines for the constituents Pb, Zr and Ti in PZT film were almost the same at a lower deposition temperature (Td) region as well as a higher Td one. This means the composition change in the film against the Td can be suppressed by using Pb(DPM)2-Zr(MMP)4-Ti(MMP)4-O2 source system. From the results of Arrhenius plot, the Tds were fixed on 450 and 540°C as lower and higher temperatures, respectively. At both Tds, the sidewall-bottom step coverage (SCs-b) was approximately 70 %, while the sidewall step coverage (SCsw) reached excellent values above 90 %. It is suggested that low SCs-b value was caused by crystallization of the PZT films at the bottom of the trench because underlayer of the film at this area was not SiO2 but crystalline TiAlN. On the other hand, no significant composition fluctuation was observed along the depth direction of the sidewall. These results mean that the film deposited at 540°C had almost the same level in terms of thickness and composition conformality as that deposited at 450°C.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 830: Symposium D – Materials and Processes for Nonvolatile Memories , 2004 , D2.2
Copyright
Copyright © Materials Research Society 2005

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Scott, J. F. and Paz de Araujo, C. A., Science 246, 1400 (1989).Google Scholar
2. Auciello, O., Scott, J. F., and Ramesh, R., Phys. Today 51, 22 (1998).Google Scholar
3. Shaw, T. W., Trolier-McKinstry, S., and McIntyre, P. C., Annu. Rev. Mater. Sci. 30, 263 (2000).Google Scholar
4. Lee, J. K., Lee, M.-S., Hong, S., Lee, W., Lee, Y. K., Shin, S., and Park, Y., Jpn. J. Appl. Phys. 41, 6690 (2002).Google Scholar
5. Summerfelt, S. R., Moise, T. S., Xing, G., Colombo, L., Sakoda, T., Gilbert, S. R., Loke, A. L. S., Ma, S., Wills, L. A., Kavari, R., Hsu, T., Amano, J., Johnson, S. T., Vestcyk, D. J., Russell, M. W., Bilodeau, S. M., and van Buskirk, P., Appl. Phys. Lett. 79, 4004 (2001).Google Scholar
6. Fujisawa, H., Kita, K., Shimizu, M. and Niu, H., Jpn. J. Appl. Phys. 40, 5551 (2001).Google Scholar
7. Kim, H. R., Jeong, S., Jeon, C. B., Kwon, O. S., Hwang, C. S., Han, Y. K., Yang, D. Y., and Oh, K. Y., J. Mater. Res. 16, 3583 (2001).Google Scholar
8. Nagashima, K., Aratani, M. and Funakubo, H., Jpn. J. Appl. Phys. 39, L996 (2000).Google Scholar
9. Funakubo, H., Asano, G., Ozeki, T., Machida, H., Yoneyama, T., and Takamatsu, Y., J. Electrochem. Soc. 151, C463 (2004).Google Scholar
10. Oikawa, T., Morioka, H., Nagai, A., Funakubo, H., and Saito, K., Appl. Phys. Lett. 85, 1754 (2004).Google Scholar