Hostname: page-component-76fb5796d-r6qrq Total loading time: 0 Render date: 2024-04-25T08:21:51.126Z Has data issue: false hasContentIssue false
  • English
  • Français

The Staebler-Wronski Effect and the Thermal Equilibration of Defect and Carrier Concentrations

Published online by Cambridge University Press:  16 February 2011

R.M.A. Dawson ,
C.M. Fortmann ,
Y.M. Li  and
C.R. Wronski
R.M.A. Dawson
Affiliation:
The Center for Electronic Materials and Processing, The Pennsylvania State University, University Park, PA 16802
C.M. Fortmann
Affiliation:
The Center for Electronic Materials and Processing, The Pennsylvania State University, University Park, PA 16802
Y.M. Li
Affiliation:
The Center for Electronic Materials and Processing, The Pennsylvania State University, University Park, PA 16802
C.R. Wronski
Affiliation:
The Center for Electronic Materials and Processing, The Pennsylvania State University, University Park, PA 16802
Get access

Abstract

Light induced degradation of intrinsic Amorphous silicon (a-Si:H) is investigated as a function of temperature. Previous work described an equilibrium framework for the high temperature behavior of dangling bonds defects (DB) 11]; and the temperature dependence of the annealed state photo, σPH, and dark, σD, conductivities of a series of intrinsic a-Si:H Materials deposited over a range of substrate temperatures, 200°C < Ts < 380°C [2]. These results are extended to the light degraded state where elevated temperatures provide for equilibration of the free carrier and DB concentrations. For the equilibrium, light degraded state, both σD and σPH, decrease compared to the annealed state while the ratio, σD/σPH remains unchanged. Relationships between the ratio [DB+]/[DB] and the Fermi level are derived from the equilibrium framework.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 336: Symposium A – Amorphous Silicon Technology - 1994 , 1994 , 251
Copyright
Copyright © Materials Research Society 1994

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Fortmann, C.M., Dawson, R.M. and Wronski, C.R., J. of Appl. Phys. (To be published);Google Scholar
Fortmann, C.M., Dawson, R.M. and Wronski, C.R., J. of Non-Cryst. Solids 137&138, 207 (1991)Google Scholar
Fortmann, C.M., Dawson, R.M. and Wronski, C.R., Mat. Res. Soc. Symp. Proc. 219, 63 (1991).Google Scholar
2. Dawson, R.M.A., Fortmann, C.M., Gunes, M., Li, Y.M., Nag, S.S., Collins, R.W. and Wronski, C.R., Appl. Phys. Lett. 63, 955 (1993).Google Scholar
3. Staebler, D.L. and Wronski, C.R., Appl. Phys. Lett. 31, 292 (1977).Google Scholar
4. Park, H.R., Liu, J.Z. and Wagner, S., Appl. Phys. Lett. 55, 2658 (1989).Google Scholar
5. Jones, D.I., LeComber, P.G. and Spear, W.E., Philos. Mag. 36, 541 (1977).Google Scholar
6. Dawson, R.M.A., Li, Youming, Gunes, M., Nag, S., Collins, R.W., Wronski, C.R., Bennett, M., and Li, Y.-M., 11th European Photovoltaic Solar Energy Conf., Montreux, Switzerland, Oct. 12–16, 1992.Google Scholar
7. Yang, L., Chen, L. and Catalano, A., Appl. Phys. Lett. 59, 840 (1991).Google Scholar
8. Dawson, R.M.A., Nag, S., Gunes, M. and Wronski, C.R., Mat. Res. Soc. Symp. Proc. 258, 747, (1992).CrossRefGoogle Scholar
9. Gelatos, A.V., Cohen, J.D. and Harbison, J.P., Appl. Phys. Lett. 49, 722 (1986).Google Scholar
10. Tiedje, T., in Physics of Disordered Materials. Eds. Adler, D., Fritzsche, H. and Ovshinsky, S.R. (Plenum Press, New York, 1985) p. 461.Google Scholar
11. Staebler, D.L. and Wronski, C.R., J. Appl. Phys. 51, 3262 (1980).Google Scholar
12. van Berkei, C. and Powell, M.J., J. Appl. Phys. 60, 1521 (1986).Google Scholar
13. Bube, R.H., Private Communication.Google Scholar
14. Gunes, M. and Wronski, C.R., This Conference.Google Scholar
15. Carlson, D.E. and Wronski, C.R., in Amorphous Semiconductors. 2nd Ed., Vol. 36, ed. Brodsky, M.H. (Springer-Verlag, New York, 1985), p. 298.Google Scholar