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Stacked n-i-p-n-i-p Heterojunctions for Image Recognition

Published online by Cambridge University Press:  01 February 2011

M. Vieira
Affiliation:
Electronics Telecommunication and Computer Dept. ISEL, Rua Conselheiro Emídio Navarro, P 1949-014 Lisboa, Portugal Tel: +351 21 8317181, Fax: +351 21 8317114, E-mail:mv@isel.pt.
A. Fantoni
Affiliation:
Electronics Telecommunication and Computer Dept. ISEL, Rua Conselheiro Emídio Navarro, P 1949-014 Lisboa, Portugal Tel: +351 21 8317181, Fax: +351 21 8317114, E-mail:mv@isel.pt.
M. Fernandes
Affiliation:
Electronics Telecommunication and Computer Dept. ISEL, Rua Conselheiro Emídio Navarro, P 1949-014 Lisboa, Portugal Tel: +351 21 8317181, Fax: +351 21 8317114, E-mail:mv@isel.pt.
P. Louro
Affiliation:
Electronics Telecommunication and Computer Dept. ISEL, Rua Conselheiro Emídio Navarro, P 1949-014 Lisboa, Portugal Tel: +351 21 8317181, Fax: +351 21 8317114, E-mail:mv@isel.pt.
I. Rodrigues
Affiliation:
Electronics Telecommunication and Computer Dept. ISEL, Rua Conselheiro Emídio Navarro, P 1949-014 Lisboa, Portugal Tel: +351 21 8317181, Fax: +351 21 8317114, E-mail:mv@isel.pt.
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Abstract

This work aims to clarify possible improvements and physical limits of the Color Laser Scanned Photodiode image sensor when used as high sensitive non-pixel image reader. A new design based on a stacked n-i-p-n-i-p heterojunction is proposed and compared with the old single n-i-p sensing structure. Results show that a B-W image is acquired with an improved resolution. The readout frequency is optimized showing that scans speeds up to 104 lines per second can be achieved without degradation in the resolution. A physical model is presented and supported by an electrical and a numerical simulation of the output characteristics of the sensor.

Type
Research Article
Copyright
Copyright © Materials Research Society 2003

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References

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