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A Stable n-Channel Indium Phosphide Field-Effect Transistor with an Amorphous Hydrogenated Silicon Gate

  • E. Roditi (a1), A.A. Iliadis (a2) and A. Christou (a3)

Abstract

InP field-effect transistors fabricated with an amorphous hydrogenated Si (a-Si:H) gate resulted in metal-insulator-like FET characteristics with no observable current drift and a transconductance of 30–38 mS/mm. The high stability of this gate system is attributed to the low temperature of deposition and the hydrogen passivation of the InP surface.

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