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Stabilization of Metastable Zinc-Blende Phase MnTe by Ionized Cluster Beam Deposition

Published online by Cambridge University Press:  25 February 2011

K. Ando ,
K. Takahashi  and
Y. Takeuchi
K. Ando
Affiliation:
Electrotechnical Laboratory, Tsukuba Science City, Ibaraki 305, Japan
K. Takahashi
Affiliation:
Electrotechnical Laboratory, Tsukuba Science City, Ibaraki 305, Japan
Y. Takeuchi
Affiliation:
Electrotechnical Laboratory, Tsukuba Science City, Ibaraki 305, Japan
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Abstract

The ionized cluster beam (ICB) deposition was use to stabilize the metastable zinc-blende (ZB) MnTe films directly on GaAs (100) substrates at 300 °C with MnTe cluster ion beam. Influences of the ionization and the acceleration voltage on film properties were investigated by the reflection high-energy electron diffraction (RHEED), optical reflection, Raman scattering, and photoluminescence. The ZB-MnTe was stabilized by 3kV acceleration of the MnTe cluster beam. These results showed that the ICB deposition is useful to get compounds having crystalline phase different from the structures observed io equilibrium-grown bulk crystals.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 279: Symposium A – Beam-Solid Interactions–Fundamentals and Applications , 1992 , 855
Copyright
Copyright © Materials Research Society 1993

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References

[1] Takaoka, H., Yamada, I., and Takagi, T., J. Vac. Sci. Technol. A3, 2665(1985).CrossRefGoogle Scholar
[2] Koyanagi, T., Matsubara, K., Takaoka, H., and Takagi, T., J. Appl. Phys. 61, 3020(1987).CrossRefGoogle Scholar
[3] Wei, S- H. and Zunger, A., Phys. Rev. Lett. 56, 2391(1986).CrossRefGoogle Scholar
[4] Allen, J. W., Lucovsky, G., and Mikkelsen, J. C. Jr, Solid State Commun. 24, 367(1977).CrossRefGoogle Scholar
[5] Durbin, S. M., Han, J., Sungki, O, Kobayashi, M., Menke, D. R., Gunshor, R. L., Fu, Q., Pelekanos, N., Nurmikko, A. V., Li, D., Gonsalves, J., and Otsuka, N., Appl. Phys. Lett. 55, 2087(1989).CrossRefGoogle Scholar
[6] Ando, K., Takahashi, K., and Okuda, T., J. Magn. Magn. Mater. 104–107, 993(1992).CrossRefGoogle Scholar
[7] Ando, K., Takahashi, K., Okuda, T., and Umehara, M., Phys. Rev. BGoogle Scholar
[8] Anno, H., Koyanagi, T., and Matsubara, K., J. Crystal Growth 117, 816(1992).CrossRefGoogle Scholar
[9] Klosowski, P., Giebultowicz, T. M., Rhyne, J. J., Samarth, N., Luo, H., and Furdyna, J. K., J. Appl. Phys. 70, 6221(1991).CrossRefGoogle Scholar
[10] Gaj, J. A., Galazka, R. R., and Nawrocki, M., Solid State Commun. 25, 193(1978).CrossRefGoogle Scholar
[11] Mobasser, S. R. and Hart, T. R., Proc. SPIE 524, 137(1985).CrossRefGoogle Scholar
[12] Venugopalan, S., Petrou, A., Galazka, R. R., Ramdas, A. K., and Rodriguez, S., Phys. Rev. 25, 2681(1982).CrossRefGoogle Scholar