We studied the effect of prolonged mechanical strain on the electrical characteristics of thin-film transistors of hydrogenated amorphous silicon made at a process temperature of 150°C on 51-μm thick Kapton polyimide foil substrates. Effects are observed only at very high compressive strain of 1.8%. Tensile strain up to fracture at 0.3% to 0.5% does not show any effect, nor does compressive strain substantially less than 1.8%. The TFTs were stressed for times up to 23 days by bending around a tube with axis perpendicular to the channel length, and were evaluated in the flattened state. The changes observed are small. The threshold voltage is increased, the “on” current and the field effect mobility remain essentially constant, and the subthreshold slope, “off” current and gate leakage current drop somewhat. Overall, the observed changes are small. We conclude that mechanical strain caused by roll-to-roll processing and permanent shaping will have negligible effects on TFT performance.