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SSRM and SCM Observation of Enhanced Lateral As- and BF2-diffusion Induced by Nitride Spacers

  • P. Eyben (a1), N. Duhayon (a1), C. Stuer (a1), I. De Wolf (a1), R. Rooyackers (a1), T. Clarysse (a1), W. Vandervorst (a1) and G. Badenes (a1)...

Abstract

State-of-the-art semiconductor devices require an accurate control of the complete twodimensional dopant distribution. The routine use of process simulators to predict the envisaged distributions and their resulting accuracy, is strongly linked to the physical models contained in these programs as well as their calibration. Whereas SIMS and SRP have been used extensively for the calibration of 1D-profiles, calibration of 2D-profiles has been very limited.

In this work, we report some results obtained with the 2D-profiling techniques SSRM (Scanning Spreading Resistance Microscopy) and SCM (Scanning Capacitance Microscopy ) for the study of two-dimensional effects on diffusion. In particular, we discuss the role of the nitride spacer on the lateral diffusion of arsenic and boron. Using series of transistors with different nitride spacers with or without TEOS-liners, a strong dependence between the lateral diffusion and the nitride spacer thickness can be observed using SSRM and SCM. The process flow eliminates the possible contribution of Transient enhanced diffusion (TED) as a dominant mechanism. At the same time an enhancement of the lateral stress underneath the spacers has been observed with CBED and Raman, suggesting a correlation between the lateral diffusion and the nitride spacers. The enhanced diffusion of As and B is strongly linked to the spacer size whereby the differences in enhancement suggest that the proximity of the dopants to the stress field field region is an important parameter.

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[1] Wolf, P. De, Clarysse, T., Vandervorst, W., Snauwaert, J., Hellemans, L., “1 and 2D carrier profiling in semiconductors by nanoSRP.”, J. Vac. Sci. tech B14(1996)380385 10.1116/1.588478
[2] Wolf, P. De, “Two-dimensional carrier profiling of semiconductor structures with nanometer resolution”,PhD thesis, KUL, May 1998.
[3] Wolf, P. De, Clarysse, T. and Vandervorst, W.: Quantification of nanospreading resistance profiling data, J. Vac. Sci. Technol. B 16(1), pp. 320326, Jan/Feb 1998 10.1116/1.589804
[4] Williams, C.C., Slinkman, J., Hough, W.P., Wickramasinghe, H.K., “Lateral dopant profiling on a 100nm scale by scanning capacitance microscopy”, J.Vac.Sci.Technol. A8(2), p. 895, 1990 10.1116/1.576936
[5] Armigliato, A., Balboni, R., Wolf, I. De, Frabboni, S., Janssens, K.G.F. and Vanhellemont, J.,“Determination of lattice strain in local isolation structures by electron diffraction techniques and micro-Raman spectroscopy”,Inst. Phys. Conf. Ser. No 134:section 5, april 1993.
[6] Aziz, M.J.,“Thermodynamics of diffusion under pressure and stress: relation to point defect mechanisms”,Appl. Phys. Lett. 70 (21), 26 May 1997.10.1063/1.119066

SSRM and SCM Observation of Enhanced Lateral As- and BF2-diffusion Induced by Nitride Spacers

  • P. Eyben (a1), N. Duhayon (a1), C. Stuer (a1), I. De Wolf (a1), R. Rooyackers (a1), T. Clarysse (a1), W. Vandervorst (a1) and G. Badenes (a1)...

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