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Sructural evolution of GaN during initial stage MOCVD growth

  • Chong Cook Kim (a1), Jung Ho Je (a2), Min-Su Yi (a2) and Do Young Noh (a2)

Abstract

The structural evolution of GaN films during the initial growth process of metalorganic chemical vapor deposition (MOCVD) - low temperature nucleation layer growth, annealing, and high temperature epitaxial growth - was investigated in a synchrotron x-ray scattering experiment. The nucleation layer grown at 560°C that was predominantly cubic GaN consisted of tensile-strained aligned domains and relaxed misaligned domains. The hexagonal GaN, transformed from the cubic GaN during annealing to 1100°C, showed disordered stacking. The atomic layer spacing decreased as the fraction of the hexagonal domains increased. Subsequent growth of epitaxial GaN at 1100°C resulted in the formation of ordered hexagonal GaN domains with rather broad mosaicity.

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1. Morkoc, H. and Mohammad, S. N., Science 267, 51 (1995)
2. Nakamura, S., Jpn. J. Appl. Phys. 30, L1705 (1991).
3. Amano, H., Sawaki, N., , Akasaki, and Toyoda, Y., Appl. Phys. Lett. 48, 353 (1986)
4. Keller, S., Keller, B. P., Wu, Y. –F., Heying, B., Kapolnek, D., Speck, J. S., Mishra, U. K., and DenBaars, S. P., Appl. Phys. Lett. 68, 1525 (1996).
5. Wu, X. H., Kapolnek, D., Tarsa, E. J., Heying, B., Keller, S., Keller, B. P., Mishra, U. K., DenBaars, S. P., and Speck, J. S., Appl. Phys. Lett. 68, 1371 (1996).
6. Munkholm, A., Thompson, C., Foster, C. M., Eastman, J. A., Auciello, O., Stephenson, G. B., Fini, P., DenBaars, S. P., and Speck, J. S., Appl. Phys. Lett. 72, 2972 (1998)
7. Noh, D. Y., Hwu, Y., Je, J. H., Hong, M., and Mannaerts, J. P., Appl. Phys. Lett. 68, 1528 (1996)
8. Grandjean, N., Massies, J., Vennegues, P., Laugt, M., and Leroux, M., Appl. Phys. Lett. 70, 643 (1997)
9. Kurobe, T., Sekiguchi, Y., Suda, J., Yoshimoto, M., and Matsunami, H., Appl. Phys. Lett. 73, 2305 (1998)
10. Wu, X. H., Fini, P., Keller, S., Tarsa, E. J., Heying, B., Mishra, U. K., DenBaars, S. P., and Speck, J. S., Jpn. J. Appl. Phys. 35, L1648 (1996).
11. Yang, B., Trampert, A., Jenichen, B., Brandt, O., and Ploog, K. H., Appl. Phys. Lett. 73, 3869 (1998).

Sructural evolution of GaN during initial stage MOCVD growth

  • Chong Cook Kim (a1), Jung Ho Je (a2), Min-Su Yi (a2) and Do Young Noh (a2)

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