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Sputtering yield measurements with size-selected gas cluster ion beams

Published online by Cambridge University Press:  31 January 2011

Kazuya Ichiki ,
Satoshi Ninomiya ,
Toshio Seki ,
Takaaki Aoki  and
Jiro Matsuo
Kazuya Ichiki
Affiliation:
ichiki.kazuya@nucleng.kyoto-u.ac.jp, Department of Nuclear Engineering, Kyoto University, Sakyo, Kyoto, Japan Fax: 81-774-38-3978
Satoshi Ninomiya
Affiliation:
Quantum Science and Engineering Center, Kyoto University, Uji, Kyoto, Japan
Toshio Seki
Affiliation:
ichiki.kazuya@nucleng.kyoto-u.ac.jp, Department of Nuclear Engineering, Kyoto University, Sakyo, Kyoto, Japan Fax: 81-774-38-3978 CREST, Japan Science and Technology Agency (JST), Chiyoda, Tokyo, Japan
Takaaki Aoki
Affiliation:
Department of Electronic Science and Engineering, Kyoto University, Nishikyo, Kyoto, Japan CREST, Japan Science and Technology Agency (JST), Chiyoda, Tokyo, Japan
Jiro Matsuo
Affiliation:
matsuo@nucleng.kyoto-u.ac.jp, Kyoto Univ, Gokasho. Uji, Kyoto, 611-0011, Japan
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Abstract

Ar cluster ions in the size range 1000�16000 atoms/cluster were irradiated onto Si substrates at incident energies of 10 and 20 keV and the sputtering yields were measured. Incident cluster ions were size-selected by using the time-of-flight (TOF) method. The sputtering yield was calculated from the sputtered Si volume and irradiation dose. It was found that the sputtering yields decreased with increasing incident cluster size under the same incident energy conditions. The integrated sputtering yields calculated from the sputtering yields measured for each size of Ar cluster ions, as well as the cluster size distributions, were in good agreement with experimental results obtained with nonselected Ar cluster ion beams.

Keywords

sputteringion-solid interactionsAr
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1181: Symposium DD – Ion Beams and Nano-Engineering , 2009 , 1181-DD13-25
Copyright
Copyright © Materials Research Society 2009

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References

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