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Sputter Deposition of GMR Spin Valves

Published online by Cambridge University Press:  10 February 2011

W. Zou
Affiliation:
Department of Materials Science and Engineering, University of Virginia, Charlottesville, VA 22903
X.W. Zhou
Affiliation:
Department of Materials Science and Engineering, University of Virginia, Charlottesville, VA 22903
J.J. Quan
Affiliation:
Department of Materials Science and Engineering, University of Virginia, Charlottesville, VA 22903
Y.G. Yang
Affiliation:
Department of Materials Science and Engineering, University of Virginia, Charlottesville, VA 22903
H.N.G. Wadley
Affiliation:
Department of Materials Science and Engineering, University of Virginia, Charlottesville, VA 22903
D. Brownell
Affiliation:
Nonvolatile Electronics, Inc., Eden Prairie, MN 55344
D. Wang
Affiliation:
Nonvolatile Electronics, Inc., Eden Prairie, MN 55344
S. Ghosal
Affiliation:
SC Solutions, Santa Clara, CA 95054
D. Subhas
Affiliation:
SC Solutions, Santa Clara, CA 95054
Robert Kosut
Affiliation:
SC Solutions, Santa Clara, CA 95054
Jon Ebert
Affiliation:
SC Solutions, Santa Clara, CA 95054
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Abstract

Radio frequency (RF) diode sputtering has been used for the growth of giant magnetoresistive (GMR) metal multilayers. Control of the atomic-scale structure of the surfaces and interfaces within these films is critical for GMR applications. A systematic series of experiments have been conducted to evaluate the dependence of the magnetotransport properties upon the growth conditions (i.e. background pressure, input power) for NiFeCo/CoFe/CuAgAu spin valves during RF diode sputter deposition. By using computational fluid dynamics, plasma, molecular dynamics, and various Monte Carlo techniques, a multiscale modeling approach has investigated the atomic assembly events during film growth. Energetic metal atoms and inert gas ion fluxes are shown to have very strong effects upon interfacial structures. The insights gained have led to novel deposition strategy propopositions for interface morphology control.

Type
Research Article
Copyright
Copyright © Materials Research Society 2000

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