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Spontaneous Change of Growth Orientation of InGaP/GaAs Superlattices in MBE

  • K. Mahalingam (a1), Y. Nakamura (a1), N. Otsuka (a1), H. Y. Lee (a2), M. J. Hafich (a2) and G. Y. Robinson (a2)...

Abstract

The influence of growth interruption during the MBE growth of (100) In0.5Ga0.5P/GaAs superlattices is investigated by cross-sectional TEM. It is observed that for certain combinations of interruption lengths and group V fluxes, the growth orientation of the superlattice changes spontaneously from [100] to <311> direction. V-shaped grooves with {311} facets form initially in the growth plane and eventually lead to the formation of regions of {311} superlattice structures. The direction of V-shaped grooves is along the [011[ axis, which is parallel to the surface dangling bonds of the group V atoms in the unreconstructed (100) plane. The most critical stage for the spontaneous change of the growth orientation is the interruption after the growth of a GaAs layer with the P2 flux. Our observations suggest that small but stable {311} facets form at this stage and develop into well-defined {311} growth planes during the growth of the GaAs layer.

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Spontaneous Change of Growth Orientation of InGaP/GaAs Superlattices in MBE

  • K. Mahalingam (a1), Y. Nakamura (a1), N. Otsuka (a1), H. Y. Lee (a2), M. J. Hafich (a2) and G. Y. Robinson (a2)...

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