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Spin accumulation in ferromagnetic/nonmagnetic devices

Published online by Cambridge University Press:  21 March 2011

Oliver Posth ,
Mario Brands  and
Günter Dumpich
Oliver Posth
Affiliation:
Experimental Physik, AG Farle, Universität Duisburg-Essen, Campus Duisburg, Lotharstr. 1, Duisburg, 47048, Germany
Mario Brands
Affiliation:
Experimental Physik, AG Farle, Universität Duisburg-Essen, Campus Duisburg, Lotharstr. 1, Duisburg, 47048, Germany
Günter Dumpich
Affiliation:
Experimental Physik, AG Farle, Universität Duisburg-Essen, Campus Duisburg, Lotharstr. 1, Duisburg, 47048, Germany
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Abstract

We have fabricated ferromagnetic/nonmagnetic (FM/NM) metal heterojunctions for the detection of the spin accumulation effect in different nonmagnetic metals. The polycrystalline heterojunctions are prepared by high resolution electron beam lithography (HR-EBL) and a special oblique evaporation technique. The ferromagnetic (FM) and the nonmagnetic (NM) metal are evaporated on top of each other in a single evaporation process to achieve a clean interface between the two metals. The spin accumulation effect is detected in nonmagnetic copper (Cu) and aluminum (Al), from which we determine the polarization of the interface between the ferromagnetic and nonmagnetic metal.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 998: Symposium J – Nanoscale Magnetics and Device Applications , 2007 , 998-J05-17
Copyright
Copyright © Materials Research Society 2007

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References

REFERENCES

1. Johnson, M., Silsbee, R. H., Phys. Rev. Lett. 55, 1790 (1985)Google Scholar
2. Jedema, F. J., Heersche, H. B., Filip, A. T., Baselmans, J. J. A. and van Wees, B. J., Nature (London) 416, 713 (2002)Google Scholar
3. Fert, A., George, J. M., Jaffres, H., Faini, G., J. Phys. D: Appl. Phys., 35, 2443 (2002)Google Scholar
4. Kimura, T., Hamrle, J., Otani, Y., Phys. Rev. B 72, 014461 (2005)Google Scholar
5. Ji, Y., Hoffmann, A., Pearson, J. E., Bader, S. D., Appl. Phys. Lett. 88, 052509 (2006)Google Scholar
6. Zaffalon, M. and van Wees, B. J., Phys. Rev. Lett. 91, 186601 (2003)Google Scholar
7. Leven, B. and Dumpich, G., Phys. Rev. B. 71, 064411 (2005)Google Scholar
8. Brands, M., Wieser, R., Hassel, C., Hinzke, D., and Dumpich, G., Phys. Rev. B 74, 174411 (2006)Google Scholar
9. Jedema, F. J., Nijboer, M. S., Filip, A. T. and van Wees, B. J., Phys. Rev. B 67, 085319 (2003)Google Scholar
10. Valet, T., Fert, A., Phys. Rev. B 48, 7099 (1993)Google Scholar